Capacitor structure

Abstract

A DRAM capacitor structure is disposed on the interior surface of a vertical hollow cylinder of a support structure overlying a semiconductor substrate. The support structure further includes a horizontal supporting layer that is integrally connected with the vertical hollow cylinder. A fabrication method for forming the DRAM capacitor structure is also provided.

What is claimed is: 
     
         1 . A capacitor structure, characterized in that:
 the capacitor structure is disposed on an interior surface of a vertical hollow cylinder of a supporting structure, wherein the supporting structure is disposed on a substrate, and the supporting structure further includes a horizontal supporting layer connected to a bottom end of the vertical hollow cylinder, and the capacitor structure is constituted by a first conductive layer disposed on at least an interior surface of the vertical hollow cylinder, a capacitor dielectric layer disposed on a surface of the first conductive layer, and a second conductive layer disposed on a surface of the capacitor dielectric layer.   
     
     
         2 . The capacitor structure according to  claim 1 , wherein a central axis of the vertical hollow cylinder is substantially perpendicular to a horizontal plane of the substrate. 
     
     
         3 . The capacitor structure according to  claim 1 , wherein the vertical hollow cylinder surrounds a capacitor disposing region, the supporting layer is disposed on a portion of the substrate where no capacitor disposing region is located, and a bottom of the vertical hollow cylinder is connected to the horizontal supporting layer. 
     
     
         4 . The capacitor structure according to  claim 1 , wherein the first conductive layer is further disposed on an exterior surface of the vertical hollow cylinder and an upper surface of the horizontal supporting layer. 
     
     
         5 . The capacitor structure according to  claim 1 , wherein the first conductive layer disposed on the interior surface of the vertical hollow cylinder is electrically insulated from the first conductive layer disposed on the exterior surface of the vertical hollow cylinder. 
     
     
         6 . The capacitor structure according to  claim 1 , wherein the supporting structure comprises a carbon layer. 
     
     
         7 . The capacitor structure according to  claim 1 , further comprising:
 a dielectric layer, disposed on the supporting structure and the capacitor structure; and   a conductive layer, disposed on the dielectric layer, wherein the conductive layer is electrically connected to each capacitor structure.   
     
     
         8 . The capacitor structure according to  claim 7 , wherein a thickness of the dielectric layer is substantially smaller than a height of the capacitor structure. 
     
     
         9 . The capacitor structure according to  claim 7 , wherein the dielectric layer includes undoped silicate glass, borophosphosilicate glass, fluorine-doped silicate glass, hydrogen silsesquioxane (Si:OH), methyl silsesquioxane (SiO:CH3), hydropolysilsesquioxane, methyl polysilsesquioxane or phenyl polysilsesquioxane. 
     
     
         10 . The capacitor structure according to  claim 1 , wherein the vertical hollow cylinder and the horizontal supporting layer are made of the same material.