Method for manufacturing pattern structure

Abstract

A method for manufacturing a pattern structure includes the steps of forming a lift-off material on a base by an inkjet technique, forming a functional film on the base and the lift-off material by atomic layer deposition, and removing the lift-off material by a lift-off technique so as to form a pattern on the base from the functional film.

1 . A method for manufacturing a pattern structure, the method comprising the steps of:
 forming a lift-off material on a base by an inkjet technique;   forming a functional film on the base and the lift-off material by atomic layer deposition; and   removing the lift-off material by a lift-off technique so as to form a pattern on the base from the functional film.   
     
     
         2 . A method for manufacturing the pattern structure according to  claim 1 , wherein the lift-off material is formed by applying ink containing a resin and a solvent onto the base and then removing the solvent. 
     
     
         3 . The method for manufacturing the pattern structure according to  claim 2 , wherein the solvent includes a first solvent having a first solubility for the resin and a second solvent having a second solubility lower than the first solubility. 
     
     
         4 . The method for manufacturing the pattern structure according to  claim 3 , wherein the first solvent is compatible with the second solvent. 
     
     
         5 . The method for manufacturing the pattern structure according to  claim 3 , wherein the solvent further includes a third solvent compatible with the first and second solvents. 
     
     
         6 . The method for manufacturing the pattern structure according to  claim 1 , wherein the base has a projection; and
 wherein the lift-off material is formed on the projection.   
     
     
         7 . The method for manufacturing the pattern structure according to  claim 6 , wherein the projection extends in a first direction along a surface of the base; and
 wherein the lift-off material is formed so as to extend in a second direction intersecting the first direction along the surface of the base.   
     
     
         8 . The method for manufacturing the pattern structure according to  claim 1 , wherein the base is a polymer film. 
     
     
         9 . The method for manufacturing the pattern structure according to  claim 1 , wherein the lift-off material is soluble in a solvent. 
     
     
         10 . The method for manufacturing the pattern structure according to  claim 1 , wherein the lift-off material is removed by using at least one of a solvent, an ultrasonic wave, water jetting, dry ice blasting, and a difference between coefficients of thermal expansion of the lift-off material and the base. 
     
     
         11 . The method for manufacturing the pattern structure according to  claim 1 , wherein the method returns to the step of forming the lift-off material after forming the pattern.