US2014091339A1PendingUtilityA1

Semiconductor device, display, and electronic apparatus

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Assignee: CREATOR TECHNOLOGY BVPriority: Jan 27, 2010Filed: Dec 6, 2013Published: Apr 3, 2014
Est. expiryJan 27, 2030(~3.5 yrs left)· nominal 20-yr term from priority
Y02P70/50Y02E10/549H10H 20/819H10D 62/124H10K 59/122H10K 59/10H10K 71/60H10K 71/191H10K 59/173H10K 71/135H10K 77/111H10K 10/484H01L 33/20H01L 29/0684
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Claims

Abstract

A semiconductor device having a substrate is disclosed. The substrate includes a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges. The second set of inner edges is positioned outside the first set of inner edges with respect to a cavity formed by the first inner edges and the second inner edges by a pre-defined distance. The substrate further includes a layer within the cavity, including a dried liquid material formed from a liquid deposited within the cavity. The layer within the cavity is formed between the respective first inner edges and the second inner edges. The semiconductor device may be implemented in a display of an electronic device.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device comprising:
 a substrate including:
 a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges, wherein the second set of inner edges is positioned outside the first set of inner edges with respect to a cavity formed by the first inner edges and the second inner edges by a pre-defined distance; and 
 a layer within the cavity, comprising a dried liquid material formed from a liquid deposited within the cavity, the layer within the cavity formed between the respective first inner edges and the second inner edges. 
   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the first set of inner edges are defined by a set of isolated elements of a layer of electrically conducting material, and the second set of inner edges are defined by wall structures provided on the isolated elements. 
     
     
         3 . The semiconductor device according to  claim 1 , wherein the predetermined distance is in a range of 1 to 20 micrometers. 
     
     
         4 . A display comprising:
 a semiconductor device comprising:
 a substrate including:
 a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges, wherein the second set of inner edges is positioned outside the first set of inner edges with respect to a cavity formed by the first inner edges and the second inner edges by a pre-defined distance; and 
 a layer within the cavity, comprising a dried liquid material formed from a liquid deposited within the cavity, the layer within the cavity formed between the respective first inner edges and the second inner edges. 
 
   
     
     
         5 . The display according to  claim 4 , wherein the first set of inner edges are defined by a set of isolated elements of a layer of electrically conducting material, and the second set of inner edges are defined by wall structures provided on the isolated elements. 
     
     
         6 . The display according to  claim 4  wherein the substrate is flexible. 
     
     
         7 . The display according to  claim 6 , wherein the display is collapsible. 
     
     
         8 . An electronic apparatus comprising a display including a semiconductor device, the semiconductor device comprising:
 a substrate including:
 a first set of inner edges and a second set of inner edges cooperating with the first set of inner edges, wherein the second set of inner edges is positioned outside the first set of inner edges with respect to a cavity formed by the first inner edges and the second inner edges by a pre-defined distance; and 
 a layer within the cavity, comprising a dried liquid material formed from a liquid deposited within the cavity, the layer within the cavity formed between the respective first inner edges and the second inner edges. 
   
     
     
         9 . The electronic apparatus according to  claim 8 , wherein the first set of inner edges are defined by a set of isolated elements of a layer of electrically conducting material, and the second set of inner edges are defined by wall structures provided on the isolated elements.

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