Method of manufacturing an organic semiconductor thin film

Abstract

A method of manufacturing an organic semiconductor thin film includes coating an organic semiconductor solution on a substrate, and shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film, wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.

1 . A method of manufacturing an organic semiconductor thin film, the method comprising:
 coating an organic semiconductor solution on a substrate; and   shearing the organic semiconductor solution in a direction that results in a shearing stress being applied to the organic semiconductor solution to form the organic semiconductor thin film,   wherein a speed of the shearing is controlled such that an intermolecular distance of the organic semiconductor solution is adjusted.   
     
     
         2 . The method of  claim 1 , wherein the speed of the shearing is controlled such that the intermolecular distance of the organic semiconductor solution is reduced. 
     
     
         3 . The method of  claim 1 , wherein the speed of the shearing is in a range between about 0.01 mm/s to about 50 mm/s. 
     
     
         4 . The method of  claim 2 , further comprising:
 mounting the substrate on a hot plate maintained at a substantially constant temperature, prior to the coating of the organic semiconductor solution.   
     
     
         5 . The method of  claim 4 , wherein the substantially constant temperature of the hot plate is in a range between about 25° C. and about 250° C. 
     
     
         6 . The method of  claim 2 , wherein the shearing of the organic semiconductor solution includes,
 contacting a shearing plate with the organic semiconductor solution, the shearing plate being oblique to a surface of the substrate, and   moving the shearing plate substantially parallel to the surface of the substrate.   
     
     
         7 . The method of  claim 2 , wherein the substrate includes at least one selected from silicon, sapphire, glass, quartz and a metal. 
     
     
         8 . The method of  claim 7 , further comprising:
 providing a thermal oxide layer on a wafer including silicon on a surface of the substrate, prior to the coating of the organic semiconductor solution.   
     
     
         9 . The method of  claim 2 , wherein the shearing of the organic semiconductor solution is performed by using a shearing plate, and
 the shearing plate includes at least one selected from silicon, sapphire, glass, quartz, and a metal.   
     
     
         10 . The method of  claim 9 , wherein the shearing plate includes,
 a wafer including silicon, and   a thermal oxide layer on the wafer.   
     
     
         11 . The method of  claim 2 , wherein the organic semiconductor solution includes an organic semiconductor material and a solvent, and
 the organic semiconductor material includes at least one of a n-conjugated monomeric semiconductor or a n-conjugated polymeric semiconductor.   
     
     
         12 . The method of  claim 11 , wherein the organic semiconductor material includes at least one selected from pentacene, tetrabenzoporphyrin, phenylenevinylene, thienylenevinylene, fluorene, fullerene, polythiophene, polythienothiophene, polyarylamine, phthalocyanine, metal phthalocyanine, perylenetetracarboxylic dianhydride (PTCDA), naphthalenetetracarboxylic dianhydride (NTCDA), perylene, coronene, poly(3-hexylthiophene (P3HT), triisopropylsilylethynyl pentacene (TIPS-pentacene), phenyl-C61-butyric acid methyl ester (PCBM), and derivatives thereof. 
     
     
         13 . The method of  claim 12 , wherein the organic solvent includes at least one selected from chlorobenzene, chloroform, toluene, benzene, tetrahydrofuran (THF), CCl4, methylene chloride, and ethyl acetate. 
     
     
         14 . The method of  claim 11 , wherein the organic semiconductor material includes 6,13-bis(triisopropylsilylethynyl) pentacene, and the solvent includes toluene. 
     
     
         15 . The method of  claim 14 , wherein the speed of shearing is about from about 0.4 mm/s to about 8.0 mm/s. 
     
     
         16 . The method of  claim 10 , wherein the solvent includes a volatile solvent.