High efficiency photovoltaic cell for solar energy harvesting

Abstract

A photovoltaic cell comprising having improved absorption of electromagnetic radiation is disclosed. The photovoltaic cell can include a rear contact, a first cell having a first band-gap energy, and a rear contact in electrical communication with an electromechanical device. The first cell can include In x Ga y Sb z , where x+y+z=1 and z ranges from 0.00001 to 0.025. the photovoltaic cell can also include a second cell having a second band-gap energy, and a first tunnel disposed between the first and second cells. The photovoltaic cell can include at least a third cell and a second tunnel disposed between the second and third cells. The uppermost cell can include GaP or InP.

We claim: 
     
         1 . A photovoltaic cell comprising:
 a rear contact; and   a first cell having a first band-gap energy supported by said rear contact, said first cell comprising In x Ga y Sb z , wherein x+y+z=1 and z ranges from 0.00001 to 0.025.   
     
     
         2 . The photovoltaic cell according to  claim 1 , further comprising:
 a second cell having a second band-gap energy; and   a first tunnel disposed between said first cell and said second cell, wherein said second cell is supported by said first cell.   
     
     
         3 . The photovoltaic cell according to  claim 2 , wherein said first band-gap energy is less than said second band-gap energy. 
     
     
         4 . The photovoltaic cell according to  claim 2 , wherein said first cell comprises an n + -doped In x Ga y Sb z  semiconductor layer and a p-doped In x Ga y Sb z  semiconductor layer. 
     
     
         5 . A photovoltaic cell, comprising:
 a rear contact;   a first cell having a first band-gap energy;   a second cell having a second band-gap energy;   a first tunnel disposed between said first cell and said second cell;   a third cell having a third band-gap energy; and   a second tunnel disposed between said second cell and said third cell,   wherein said first cell is over said rear contact, said second cell is over said first cell, and said third cell is over said second cell, and   wherein said first cell comprises In x Ga y Sb z , wherein x+y+z=1 and z ranges from 0.00001 to 0.025.   
     
     
         6 . The photovoltaic cell according to  claim 5 , wherein said first band-gap energy is less than said second band-gap energy, and said second band-gap energy is less than said third band-gap energy. 
     
     
         7 . The photovoltaic cell according to  claim 6 , wherein said first bad-gap energy is between 0.25 eV and 0.55 eV. 
     
     
         8 . The photovoltaic cell according to  claim 5 , wherein said first cell comprises an n + -doped In x Ga y Sb z  semiconductor layer and a p-doped In x Ga y Sb z . 
     
     
         9 . The photovoltaic cell according to  claim 5 , wherein said first cell comprises a semiconductor layer comprising In x Ga y Sb z , wherein:
 x ranges from 0.23 to 0.50,   y ranges from 0.50 to 0.77, and   z ranges from 0.00001 to 0.025.   
     
     
         10 . The photovoltaic cell according to  claim 5 , wherein said third cell comprises one or more of InP, GaP, AlInP and InGaSb. 
     
     
         11 . The photovoltaic cell according to  claim 5 , wherein said second cell comprises one or more of InGaAs, InP and InGaP. 
     
     
         12 . The photovoltaic cell according to  claim 5 , wherein said third cell comprises one or more of InP, GaP, AlInP and InGaSb; and
 said second cell comprises one or more of InGaAs, InP and InGaP.   
     
     
         13 . The photovoltaic cell according to  claim 12 , wherein
 (i) said first tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;   (ii) said second tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n + -type GaAs or a n ++ -type InGaP semiconductor layer; or   (iii) both.   
     
     
         14 . The photovoltaic cell according to  claim 5 , wherein
 (i) said first tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;   (ii) said second tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n + -type GaAs or a n ++ -type InGaP semiconductor layer; or   (iii) both.   
     
     
         15 . The photovoltaic cell according to  claim 5 , wherein the third cell comprises an In x Ga y Sb z  semiconductor layer. 
     
     
         16 . The photovoltaic cell according to  claim 5 , wherein said first cell comprises an n-type InGaSb semiconductor layer and said third cell comprises a p-type InGaSb semiconductor layer. 
     
     
         17 . The photovoltaic cell according to  claim 5 , wherein said first cell comprises an InGaAs semiconductor layer;
 said second cell comprises one or more of an InGaAs semiconductor layer, an InP semiconductor layer, and an InGaP semiconductor layer; and   said third cell comprises one or more of an InP semiconductor layer, a GaP semiconductor layer, an AlInP semiconductor layer, and an InGaSb semiconductor layer.   
     
     
         18 . The photovoltaic cell according to  claim 17 , wherein
 (i) said first tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n ++ -type GaAs or n ++ -type InGaAs semiconductor layer;   (ii) said second tunnel comprises a p ++ -type GaAs or a p ++ -type AlGaAs semiconductor layer and an n + -type GaAs or a n ++ -type InGaP semiconductor layer; or   (iii) both.   
     
     
         19 . The photovoltaic cell according to  claim 5 , wherein
 said second cell comprises an InGaAs semiconductor layer and an InGaP semiconductor layer; and   said third cell comprises an AlInP semiconductor layer and an InP semiconductor layer, a GaP semiconductor layer, or both.   
     
     
         20 . A system for harvesting solar energy, comprising
 an electromechanical device in electrical communication with at least one photovoltaic cell according to  claim 1 .