Single junction type cigs thin film solar cell and method for manufacturing the thin film solar cell

Abstract

Provided is a single junction type GIGS thin film solar cell, which includes a CIGS light absorption layer manufactured using a single junction. The single junction type GIGS thin film solar cell includes a substrate, a back contact deposited on the substrate, a light absorption layer deposited on the back contact and including a P type GIGS layer and an N type GIGS layer coupled to the P type CIGS layer using a single junction, and a reflection prevention film deposited on the light absorption layer.

What is claimed is: 
     
         1 . A single junction type GIGS (Cu (In, Ga) Se 2 ) thin film solar cell comprising:
 a substrate;   a back contact disposed on the substrate;   a light absorption layer disposed on the back contact and comprising a single junction diode comprising a GIGS thin film; and   a reflection prevention film disposed on the light absorption layer.   
     
     
         2 . The single junction type GIGS thin film solar cell of  claim 1 , wherein the light absorption layer comprises:
 a P type GIGS layer disposed on the back contact; and   an N type GIGS layer disposed on the P type GIGS layer using a single junction.   
     
     
         3 . The single junction type GIGS thin film solar cell of  claim 1 , further comprising a window layer disposed on the N type GIGS layer between the light absorption layer and the reflection prevention film.