Artificial microstructure and artificial electromagnetic material using the same

Abstract

The present invention provides an artificial microstructure. The artificial microstructure includes at least three split rings. The at least three split rings surround and embed in turn. Each split ring is formed by a wire which is made of conductive material, with two terminals of the wire towards each other to form an opening of the corresponding split ring. The present invention also provides an artificial electromagnetic material using the artificial microstructure. The artificial electromagnetic material with the artificial microstructure can achieve the function of broadband wave-absorbing.

1 . An artificial microstructure used in artificial electromagnetic material, comprising a first line segment and a second line segment perpendicular to the first line segment, the first line segment and the second line segment intersecting with each other to form a cross-type structure. 
     
     
         2 . The artificial microstructure of  claim 1 , wherein the artificial microstructure comprises a plurality of third segments, distal ends of the first line segment and the second line segment are respectively connected to the third line segments. 
     
     
         3 . The artificial microstructure of  claim 2 , wherein an distal end of the third line segment extends outward in a direction 45 degrees relative to the first line segment or the second line segment. 
     
     
         4 . The artificial microstructure of  claim 2 , wherein the artificial microstructure comprises a line segment group, the line segment group comprises a plurality of fourth line segments, each of the third segments has a fourth line segment vertically connected to both ends thereof. 
     
     
         5 . The artificial microstructure of  claim 4 , wherein the artificial microstructure comprises N line segment groups, each line segment of the N segment group is connected to a distal end of the line segment of the N−1 line segment group, and is perpendicular to the line segment of the N−1 segment group, wherein N represents an integer greater than 1. 
     
     
         6 . The artificial microstructure of  claim 1 , wherein a distal end of the first line segment and a distal end of the second line segment each comprise a curve portion. 
     
     
         7 . The artificial microstructure of  claim 6 , wherein the curve portion comprises at least one circuitous curve. 
     
     
         8 . The artificial microstructure of  claim 6 , wherein the artificial microstructure comprises a plurality of third line segments, the curve portion is connected to a corresponding third line segment. 
     
     
         9 . The artificial microstructure of  claim 6 , wherein the first line segment and the second line segment intersect with each other to form four parts, each of the parts and a corresponding curve portion thereof form a spiral. 
     
     
         10 . The artificial microstructure of  claim 9 , wherein two curve portions located at a same imaginary line of the first line segment or the second line segment are symmetric relative to each other. 
     
     
         11 . The artificial microstructure of  claim 9 , wherein the spiral is rectangular spiral or triangular spiral. 
     
     
         12 . The artificial microstructure of  claim 9 , wherein the first line segments and the second line segments of a plurality of artificial microstructures intersect with each other at an imaginary central point. 
     
     
         13 . The artificial microstructure of  claim 12 , wherein each curve portion coincides with a neighboring curve portion if such curve portion rotate 360/M degrees about an imaginary point intersected by the first line segment and the segment and served as a rotation center, wherein M represents the number of curve portion. 
     
     
         14 . The artificial microstructure of  claim 1 , wherein the artificial microstructure comprises a sixth line segment, the sixth line segment is perpendicular to the first line segment and the second line segment, and the sixth line segment, the first line segment and the second line segment interest at a point. 
     
     
         15 . The artificial microstructure of  claim 14 , wherein the artificial microstructure comprises a plurality of third line segments, a distal end of the first line segment and a distal end of the second line segment each are respectively connected to the third line segments. 
     
     
         16 . The artificial microstructure of  claim 15 , wherein the artificial microstructure comprises a line segment group, the line segment group comprises a plurality of fourth line segments, each of the third segments has a fourth line segment vertically connected to both ends thereof. 
     
     
         17 . The artificial microstructure of  claim 16 , wherein the artificial microstructure comprises N line segment groups, each line segment of the N segment group is connected to a distal end of the line segment of the N−1 line segment group, and is perpendicular to the line segment of the N−1 segment group, wherein N represents an integer greater than 1. 
     
     
         18 . The artificial microstructure of  claim 16 , wherein the artificial microstructure are mirror images of each other along an imaginary center axis. 
     
     
         19 . An artificial electromagnetic material, comprising:
 a substrate, the substrate comprising a plurality of structural units;   a plurality of artificial microstructures arranged in the respective structural units, each artificial microstructure comprising a first line segment and a second line segment perpendicular to the first line segment, the first line segment and the second line segment intersecting with each other to form a cross-type structure.   
     
     
         20 . The artificial electromagnetic material of  claim 19 , wherein a size of the structural unit equal to or less than one tenth of the wavelength of the response electromagnetic. 
     
     
         21 . The artificial electromagnetic material of  claim 1 , wherein the artificial microstructure comprises a plurality of third segments, distal ends of the first line segment and the second line segment are respectively connected to the third line segments. 
     
     
         22 . The artificial electromagnetic material of  claim 21 , wherein an distal end of the third line segment extends outward in a direction 45 degrees relative to the first line segment or the second line segment. 
     
     
         23 . The artificial electromagnetic material of  claim 21 , wherein the artificial microstructure comprises a line segment group, the line segment group comprises a plurality of fourth line segments, each of the third segments has a fourth line segment vertically connected to both ends thereof. 
     
     
         24 . The artificial electromagnetic material of  claim 23 , wherein the artificial microstructure comprises N line segment groups, each line segment of the N segment group is connected to a distal end of the line segment of the N−1 line segment group, and is perpendicular to the line segment of the N−1 segment group, wherein N represents an integer greater than 1. 
     
     
         25 . The artificial electromagnetic material of  claim 19 , wherein a distal end of the first line segment and a distal end of the second line segment each comprise a curve portion. 
     
     
         26 . The artificial electromagnetic material of  claim 25 , wherein the curve portion comprises at least one circuitous curve. 
     
     
         27 . The artificial microstructure of  claim 25 , wherein the artificial microstructure comprises a plurality of third line segments, the curve portion is connected to a corresponding third line segment. 
     
     
         28 . The artificial electromagnetic material of  claim 25 , wherein the first line segment and the second line segment intersect with each other to form four parts, each of the parts and a corresponding curve portion thereof form a spiral. 
     
     
         29 . The artificial electromagnetic material of  claim 28 , wherein two curve portions located at a same imaginary line of the first line segment or the second line segment are symmetric relative to each other. 
     
     
         30 . The artificial electromagnetic material of  claim 28 , wherein the spiral is rectangular spiral or triangular spiral. 
     
     
         31 . The artificial electromagnetic material of  claim 28 , wherein the first line segments and the second line segments of a plurality of artificial microstructures intersect with each other at an imaginary central point. 
     
     
         32 . The artificial electromagnetic material of  claim 31 , wherein each curve portion coincides with a neighboring curve portion if such curve portion rotate 360/M degrees about an imaginary point intersected by the first line segment and the segment and served as a rotation center, wherein M represents the number of curve portion. 
     
     
         33 . The artificial electromagnetic material of  claim 19 , wherein the artificial microstructure comprises a sixth line segment, the sixth line segment is perpendicular to the first line segment and the second line segment, and the sixth line segment, the first line segment and the second line segment interest at a point. 
     
     
         34 . The artificial electromagnetic material of  claim 33 , wherein the artificial microstructure comprises a plurality of third line segments, a distal end of the first line segment and a distal end of the second line segment each are respectively connected to the third line segments. 
     
     
         35 . The artificial electromagnetic material of  claim 34 , wherein the artificial microstructure comprises a line segment group, the line segment group comprises a plurality of fourth line segments, each of the third segments has a fourth line segment vertically connected to both ends thereof. 
     
     
         36 . The artificial electromagnetic material of  claim 35 , wherein the artificial microstructure comprises N line segment groups, each line segment of the N segment group is connected to a distal end of the line segment of the N−1 line segment group, and is perpendicular to the line segment of the N−1 segment group, wherein N represents an integer greater than 1. 
     
     
         37 . The artificial electromagnetic material of  claim 35 , wherein the artificial microstructure are mirror images of each other along an imaginary center axis.