US2014116329A1PendingUtilityA1

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

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Assignee: CHAUDHARI KARINPriority: May 28, 2008Filed: Jan 2, 2014Published: May 1, 2014
Est. expiryMay 28, 2028(~1.9 yrs left)· nominal 20-yr term from priority
Inventors:Praveen Chaudhari
H10P 14/3462H10P 14/3458H10P 14/3456H10P 14/3431H10P 14/3428H10P 14/3421H10P 14/3411H10P 14/3238H10P 14/3202H10P 14/2923H10P 14/2922H10P 14/279H10P 14/274H10P 14/263H10P 14/26H10P 14/24H10F 77/707H10F 77/703H10F 77/30H10F 71/00H10F 19/20H10F 10/161H10F 10/142H10F 71/121Y02P70/50C30B 23/025C30B 25/183Y02E10/544Y02E10/547C30B 11/12C30B 25/02C30B 29/06
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Claims

Abstract

A method is disclosed for making sapphire glass, consisting of a layer of sapphire on glass. The sapphire layer, or crystalline Al 2 O 3 , is deposited on ordinary (soda-lime) glass via a textured MgO template.

Claims

exact text as granted — not AI-modified
1 . A method of producing sapphire on glass, comprising:
 depositing an MgO film on glass; and   depositing Al 2 O 3  on said MgO film.   
     
     
         2 . The method of  claim 1 , wherein said MgO film is crystalline. 
     
     
         3 . The method of  claim 1 , wherein said Al 2 O 3  film is crystalline sapphire. 
     
     
         4 . The method of  claim 1 , wherein said MgO film is deposited below about 600° C. 
     
     
         5 . The method of  claim 1 , wherein the Al 2 O 3  film is single crystalline sapphire. 
     
     
         6 . The method of  claim 1 , wherein said Al 2 O 3  is deposited below about 600° C. 
     
     
         7 . The method of  claim 1 , wherein said glass is soda-lime. 
     
     
         8 . The method of  claim 1 , wherein said glass is borosilicate. 
     
     
         9 . A method of depositing single crystalline semiconductors on sapphire glass below the softening temperature of ordinary glass. 
     
     
         10 . The method of  claim 8 , wherein the semiconductor comprises Si, Ge, Ga, or GaAs. 
     
     
         11 . The method of  claim 8 , wherein said sapphire glass is a single crystalline sapphire substrate. 
     
     
         12 . The method of  claim 8 , wherein said semiconductors are large grained. 
     
     
         13 . The method of  claim 8  where said sapphire glass is crystalline Al 2 O 3  not single crystalline.

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