US2014117311A1PendingUtilityA1

Semiconductor structure having nanocrystalline core and nanocrystalline shell pairing with compositional transition layer

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Individually held — no corporate assignee on recordPriority: Oct 29, 2012Filed: Oct 29, 2012Published: May 1, 2014
Est. expiryOct 29, 2032(~6.2 yrs left)· nominal 20-yr term from priority
Inventors:Juanita N. Kurtin
H10D 62/862H10D 62/814H10D 62/118H10H 20/8512H10H 20/812B82Y 10/00C09K 11/025B82Y 20/00C09K 11/883
52
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Claims

Abstract

Semiconductor structures having a nanocrystalline core and nanocrystalline shell pairing compositional transition layers are described. In an example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A compositional transition layer is disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell and has a composition intermediate to the first and second semiconductor materials. In another example, a semiconductor structure includes a nanocrystalline core composed of a first semiconductor material. A nanocrystalline shell composed of a second semiconductor material surrounds the nanocrystalline core. A nanocrystalline outer shell surrounds the nanocrystalline shell and is composed of a third semiconductor material. A compositional transition layer is disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell and has a composition intermediate to the second and third semiconductor materials.

Claims

exact text as granted — not AI-modified
1 . A semiconductor structure, comprising:
 a nanocrystalline core comprising a first semiconductor material;   a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core; and   a compositional transition layer disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell, the compositional transition layer having a composition intermediate to the first and second semiconductor materials.   
     
     
         2 . The semiconductor structure of  claim 1 , wherein the compositional transition layer is an alloyed layer comprising a mixture of the first and second semiconductor materials. 
     
     
         3 . The semiconductor structure of  claim 1 , wherein the compositional transition layer is a graded layer comprising a compositional gradient of the first semiconductor material proximate to the nanocrystalline core through to the second semiconductor material proximate to the nanocrystalline shell. 
     
     
         4 . The semiconductor structure of  claim 1 , wherein the compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         5 . The semiconductor structure of  claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), and the compositional transition layer comprises CdSe x S y , where 0<x<1 and 0<y<1. 
     
     
         6 . The semiconductor structure of  claim 1 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), and the compositional transition layer comprises Cd x Zn y Se, where 0<x<1 and 0<y<1. 
     
     
         7 . The semiconductor structure of  claim 1 , wherein the compositional transition layer passivates or reduces trap states where the nanocrystalline shell surrounds the nanocrystalline core. 
     
     
         8 . The semiconductor structure of  claim 1 , wherein the nanocrystalline core is an anisotropic nanocrystalline core having an aspect ratio between, but not including, 1.0 and 2.0. 
     
     
         9 . The semiconductor structure of  claim 8 , wherein the nanocrystalline shell is an anisotropic nanocrystalline shell having an aspect ratio approximately in the range of 4-6. 
     
     
         10 . The semiconductor structure of  claim 8 , wherein the aspect ratio of the anisotropic nanocrystalline core is approximately in the range of 1.01-1.2. 
     
     
         11 . The semiconductor structure of  claim 1 , further comprising:
 an insulator coating surrounding and encapsulating the nanocrystalline core/nanocrystalline shell pairing.   
     
     
         12 . The semiconductor structure of  claim 11 , wherein the insulator coating comprises an amorphous material selected from the group consisting of silicon dioxide (SiO 2 ), silicon oxide (SiO x ), aluminum oxide (Al 2 O 3 ), zirconia (ZrO x ), titania (TiO x ), and hafnia (HfO x ). 
     
     
         13 . The semiconductor structure of  claim 1 , wherein the nanocrystalline shell completely surrounds the nanocrystalline core. 
     
     
         14 . The semiconductor structure of  claim 1 , wherein the nanocrystalline shell only partially surrounds the nanocrystalline core, exposing a portion of the nanocrystalline core. 
     
     
         15 . The semiconductor structure of  claim 1 , wherein the nanocrystalline core is disposed in an asymmetric orientation with respect to the nanocrystalline shell. 
     
     
         16 . The semiconductor structure of  claim 1 , wherein the nanocrystalline core, nanocrystalline shell and compositional transition layer form a quantum dot. 
     
     
         17 . The semiconductor structure of  claim 16 , wherein the quantum dot is a down-converting quantum dot. 
     
     
         18 . The semiconductor structure of  claim 16 , wherein the quantum dot is an up-shifting quantum dot. 
     
     
         19 . The semiconductor structure of  claim 1 , further comprising:
 a nanocrystalline outer shell at least partially surrounding the nanocrystalline shell, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials.   
     
     
         20 . The semiconductor structure of  claim 19 , further comprising:
 a second compositional transition layer disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell, the second compositional transition layer having a composition intermediate to the second and third semiconductor materials.   
     
     
         21 . The semiconductor structure of  claim 20 , wherein the second compositional transition layer is an alloyed layer comprising a mixture of the second and third semiconductor materials. 
     
     
         22 . The semiconductor structure of  claim 20 , wherein the second compositional transition layer is a graded layer comprising a compositional gradient of the second semiconductor material proximate to the nanocrystalline shell through to the third semiconductor material proximate to the nanocrystalline outer shell. 
     
     
         23 . The semiconductor structure of  claim 20 , wherein the second compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         24 . The semiconductor structure of  claim 20 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises Cd x Zn y S, where 0<x<1 and 0<y<1. 
     
     
         25 . The semiconductor structure of  claim 20 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises ZnSe x S y , where 0<x<1 and 0<y<1. 
     
     
         26 . The semiconductor structure of  claim 20 , wherein the second compositional transition layer passivates or reduces trap states where the nanocrystalline outer shell surrounds the nanocrystalline shell. 
     
     
         27 . A semiconductor structure, comprising:
 a nanocrystalline core comprising a first semiconductor material;   a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core;   a nanocrystalline outer shell at least partially surrounding the nanocrystalline shell, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials; and   a compositional transition layer disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell, the compositional transition layer having a composition intermediate to the second and third semiconductor materials.   
     
     
         28 . The semiconductor structure of  claim 27 , wherein the compositional transition layer is an alloyed layer comprising a mixture of the second and third semiconductor materials. 
     
     
         29 . The semiconductor structure of  claim 27 , wherein the compositional transition layer is a graded layer comprising a compositional gradient of the second semiconductor material proximate to the nanocrystalline shell through to the third semiconductor material proximate to the nanocrystalline outer shell. 
     
     
         30 . The semiconductor structure of  claim 27 , wherein the compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         31 . The semiconductor structure of  claim 27 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), the third semiconductor material is zinc sulfide (ZnS), and the compositional transition layer comprises Cd x Zn y S, where 0<x<1 and 0<y<1. 
     
     
         32 . The semiconductor structure of  claim 27 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), the third semiconductor material is zinc sulfide (ZnS), and the compositional transition layer comprises ZnSe x S y , where 0<x<1 and 0<y<1. 
     
     
         33 . The semiconductor structure of  claim 27 , wherein the compositional transition layer passivates or reduces trap states where the nanocrystalline outer shell surrounds the nanocrystalline shell. 
     
     
         34 . The semiconductor structure of  claim 27 , wherein the nanocrystalline shell is an anisotropic nanocrystalline shell having an aspect ratio approximately in the range of 4-6. 
     
     
         35 . The semiconductor structure of  claim 27 , further comprising:
 an insulator coating surrounding and encapsulating the nanocrystalline core/nanocrystalline shell/nanocrystalline outer shell combination.   
     
     
         36 . The semiconductor structure of  claim 35 , wherein the insulator coating comprises an amorphous material selected from the group consisting of silicon dioxide (SiO 2 ), silicon oxide (SiO x ), aluminum oxide (Al 2 O 3 ), zirconia (ZrO x ), titania (TiO x ), and hafnia (HfO x ). 
     
     
         37 . The semiconductor structure of  claim 27 , wherein the nanocrystalline outer shell completely surrounds the nanocrystalline shell. 
     
     
         38 . The semiconductor structure of  claim 27 , wherein the nanocrystalline outer shell only partially surrounds the nanocrystalline shell, exposing a portion of the nanocrystalline shell. 
     
     
         39 . The semiconductor structure of  claim 27 , wherein the nanocrystalline core, nanocrystalline shell, nanocrystalline outer shell, and compositional transition layer form a quantum dot. 
     
     
         40 . The semiconductor structure of  claim 39 , wherein the quantum dot is a down-converting quantum dot. 
     
     
         41 . The semiconductor structure of  claim 39 , wherein the quantum dot is an up-shifting quantum dot. 
     
     
         42 . A composite, comprising:
 a matrix material; and   a plurality of semiconductor structures embedded in the matrix material, each semiconductor structure comprising:   a nanocrystalline core comprising a first semiconductor material;   a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core;
 a compositional transition layer disposed between, and in contact with, the nanocrystalline core and nanocrystalline shell, the compositional transition layer having a composition intermediate to the first and second semiconductor materials; and 
 an amorphous insulator coating surrounding and encapsulating the nanocrystalline core/nanocrystalline shell pairing. 
   
     
     
         43 . The composite of  claim 42 , wherein each of the plurality of semiconductor structures is cross-linked with, polarity bound by, or tethered to the matrix material. 
     
     
         44 . The composite of  claim 42 , wherein each of the plurality of semiconductor structures is bound to the matrix material by a covalent, dative, or ionic bond. 
     
     
         45 . The composite of  claim 42 , wherein one or more of the semiconductor structures further comprises a coupling agent covalently bonded to an outer surface of the amorphous insulator coating. 
     
     
         46 . The composite of  claim 42 , wherein the compositional transition layer is an alloyed layer comprising a mixture of the first and second semiconductor materials. 
     
     
         47 . The composite of  claim 42 , wherein the compositional transition layer is a graded layer comprising a compositional gradient of the first semiconductor material proximate to the nanocrystalline core through to the second semiconductor material proximate to the nanocrystalline shell. 
     
     
         48 . The composite of  claim 42 , wherein the compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         49 . The composite of  claim 42 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), and the compositional transition layer comprises CdSe x S y , where 0<x<1 and 0<y<1. 
     
     
         50 . The composite of  claim 42 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), and the compositional transition layer comprises Cd x Zn y Se, where 0<x<1 and 0<y<1. 
     
     
         51 . The composite of  claim 42 , wherein the compositional transition layer passivates or reduces trap states where the nanocrystalline shell surrounds the nanocrystalline core. 
     
     
         52 . The composite of  claim 42 , wherein the amorphous insulator coating comprises a material selected from the group consisting of silicon dioxide (SiO 2 ), silicon oxide (SiO x ), aluminum oxide (Al 2 O 3 ), zirconia (ZrO x ), titania (TiO x ), and hafnia (HfO x ). 
     
     
         53 . The composite of  claim 42 , wherein each of the semiconductor structures is a down-converting quantum dot. 
     
     
         54 . The composite of  claim 42 , wherein each of the semiconductor structures is an up-shifting quantum dot. 
     
     
         55 . The composite of  claim 42 , wherein each semiconductor structure further comprises:
 a nanocrystalline outer shell at least partially surrounding the nanocrystalline shell, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials.   
     
     
         56 . The composite of  claim 55 , each semiconductor structure further comprising:
 a second compositional transition layer disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell, the second compositional transition layer having a composition intermediate to the second and third semiconductor materials.   
     
     
         57 . The composite of  claim 56 , wherein the second compositional transition layer is an alloyed layer comprising a mixture of the second and third semiconductor materials. 
     
     
         58 . The composite of  claim 56 , wherein the second compositional transition layer is a graded layer comprising a compositional gradient of the second semiconductor material proximate to the nanocrystalline shell through to the third semiconductor material proximate to the nanocrystalline outer shell. 
     
     
         59 . The composite of  claim 56 , wherein the second compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         60 . The composite of  claim 56 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises Cd x Zn y S, where 0<x<1 and 0<y<1. 
     
     
         61 . The composite of  claim 56 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), the third semiconductor material is zinc sulfide (ZnS), and the second compositional transition layer comprises ZnSe x S y , where 0<x<1 and 0<y<1. 
     
     
         62 . The composite of  claim 56 , wherein the second compositional transition layer passivates or reduces trap states where the nanocrystalline outer shell surrounds the nanocrystalline shell. 
     
     
         63 . A composite, comprising:
 a matrix material; and   a plurality of semiconductor structures embedded in the matrix material, each semiconductor structure comprising:   a nanocrystalline core comprising a first semiconductor material;   a nanocrystalline shell comprising a second, different, semiconductor material at least partially surrounding the nanocrystalline core;   a nanocrystalline outer shell at least partially surrounding the nanocrystalline shell, the nanocrystalline outer shell comprising a third semiconductor material different from the first and second semiconductor materials;   a compositional transition layer disposed between, and in contact with, the nanocrystalline shell and the nanocrystalline outer shell, the compositional transition layer having a composition intermediate to the second and third semiconductor materials; and   an amorphous insulator coating surrounding and encapsulating the nanocrystalline core/nanocrystalline shell/nanocrystalline outer shell combination.   
     
     
         64 . The composite of  claim 63 , wherein each of the plurality of semiconductor structures is cross-linked with, polarity bound by, or tethered to the matrix material. 
     
     
         65 . The composite of  claim 63 , wherein each of the plurality of semiconductor structures is bound to the matrix material by a covalent, dative, or ionic bond. 
     
     
         66 . The composite of  claim 63 , wherein one or more of the semiconductor structures further comprises a coupling agent covalently bonded to an outer surface of the amorphous insulator coating. 
     
     
         67 . The composite of  claim 63 , wherein the compositional transition layer is an alloyed layer comprising a mixture of the second and third semiconductor materials. 
     
     
         68 . The composite of  claim 63 , wherein the compositional transition layer is a graded layer comprising a compositional gradient of the second semiconductor material proximate to the nanocrystalline shell through to the third semiconductor material proximate to the nanocrystalline outer shell. 
     
     
         69 . The composite of  claim 63 , wherein the compositional transition layer has a thickness approximately in the range of 1.5-2 monolayers. 
     
     
         70 . The composite of  claim 63 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is cadmium sulfide (CdS), the third semiconductor material is zinc sulfide (ZnS), and the compositional transition layer comprises Cd x Zn y S, where 0<x<1 and 0<y<1. 
     
     
         71 . The composite of  claim 63 , wherein the first semiconductor material is cadmium selenide (CdSe), the second semiconductor material is zinc selenide (ZnSe), the third semiconductor material is zinc sulfide (ZnS), and the compositional transition layer comprises ZnSe x S y , where 0<x<1 and 0<y<1. 
     
     
         72 . The composite of  claim 63 , wherein the compositional transition layer passivates or reduces trap states where the nanocrystalline outer shell surrounds the nanocrystalline shell. 
     
     
         73 . The composite of  claim 63 , wherein the amorphous insulator coating comprises an amorphous material selected from the group consisting of silicon dioxide (SiO 2 ), silicon oxide (SiO x ), aluminum oxide (Al 2 O 3 ), zirconia (ZrO x ), titania (TiO x ), and hafnia (HfO x ). 
     
     
         74 . The composite of  claim 63 , wherein each of the semiconductor structures is a down-converting quantum dot. 
     
     
         75 . The composite of  claim 63 , wherein each of the semiconductor structures is an up-shifting quantum dot.

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