Allocation structure for flash memory device

Abstract

An allocation structure is used for a flash memory device. The flash memory device includes a first memory module and a second memory module. The first memory module and the second memory module respectively have a plurality of groups, and each of the groups of the first memory module has a plurality of physical blocks of the first memory module and each of the groups of the second memory module has a plurality of physical blocks of the second memory module. The allocation structure includes a first zone. The first zone is used to store a first allocation unit, and is formed by a first group of the groups of the first memory module and a first part of a second group of the groups of the second memory module.

What is claimed is: 
     
         1 . An allocation structure, adapted to a flash memory device, the flash memory device comprising a first memory module and a second memory module, the first memory module and the second memory module respectively having a plurality of groups, and each of the groups of the first memory module having a plurality of physical blocks of the first memory module and each of the groups of the second memory module having a plurality of physical blocks of the second memory module, and the allocation structure comprising:
 a first zone, for storing a first allocation unit, and formed by a first group of the groups of the first memory module and a first part of a second group of the groups of the second memory module.   
     
     
         2 . The allocation structure as claimed in  claim 1 , further comprising:
 a second zone, for storing a second allocation unit, and formed by a third group of the groups of the first memory module and a second part of the second group of the second memory module.   
     
     
         3 . The allocation structure as claimed in  claim 2 , further comprising:
 a third zone, for storing a third allocation unit, and formed by a fifth group of the groups of the first memory module and a third part of the second group of the second memory module.   
     
     
         4 . The allocation structure as claimed in  claim 1 , further comprising:
 a second zone, for storing a second allocation unit, and formed by at a first part and a second part of a third group of the groups of the first memory module and a second part and a third part of the second group of the second memory module.   
     
     
         5 . The allocation structure as claimed in  claim 4 , further comprising:
 a third zone, for storing a third allocation unit, and formed by a third part of the third group of the first memory module and a fourth group of the groups of the second memory module.   
     
     
         6 . A control method, adapted to a flash memory device, the flash memory device comprising a first memory module and a second memory module, and the control method comprising:
 receiving at least one allocation unit; and   separately writing the received allocation unit into the first memory module and the second memory module;   wherein a data amount of the allocation unit wrote into the first memory module is unequal to a data amount of the allocation unit wrote into the second memory module.