Method for manufacturing molybdenum oxide-containing thin film, starting material for forming molybdenum oxide-containing thin film, and molybdenum amide compound

Abstract

Disclosed is a method for manufacturing a molybdenum oxide-containing thin film, involving vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate. In the formula, R 1 and R 2 each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R 3 represents a t-butyl group or a t-amyl group, y represents 0 or 2, x is 4 when y is 0, or x is 2 when y is 2, wherein R 1 and R 2 that are plurally present may be the same or different.

1 . A method for manufacturing a molybdenum oxide-containing thin film, comprising,
 vaporizing a starting material for forming a thin film containing a compound represented by the following general formula (I) to give vapor containing a molybdenum amide compound, introducing the obtained vapor onto a substrate, and further introducing an oxidizing gas to cause decomposition and/or a chemical reaction to form a thin film on the substrate:   
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R 3  represents a t-butyl group or a t-amyl group, y represents 0 or 2, and x is 4 when y is 0, or x is 2 when y is 2, wherein R 1  and R 2  that are plurally present may be the same or different. 
     
     
         2 . The method for manufacturing a molybdenum oxide-containing thin film according to  claim 1 , wherein the oxidizing gas is a gas containing ozone, oxygen or water. 
     
     
         3 . A starting material for forming a molybdenum oxide-containing thin film, which contains the compound represented by the following general formula (I) used for the method for the manufacture of a thin film according to  claim 1 : 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R 3  represents a t-butyl group or a t-amyl group, y represents 0 or 2, and x is 4 when y is 0, or x is 2 when y is 2, wherein R 1  and R 2  that are plurally present may be the same or different. 
     
     
         4 . A compound represented by the following general formula (II): 
       
         
           
           
               
               
           
         
       
       wherein R 4  and R 5  each represents a straight or branched alkyl group having 1 to 4 carbon atom(s). 
     
     
         5 . A starting material for forming a molybdenum oxide-containing thin film, which contains the compound represented by the following general formula (I) used for the method for the manufacture of a thin film according to  claim 2 : 
       
         
           
           
               
               
           
         
       
       wherein R 1  and R 2  each represents a straight or branched alkyl group having 1 to 4 carbon atom(s), R 3  represents a t-butyl group or a t-amyl group, y represents 0 or 2, and x is 4 when y is 0, or x is 2 when y is 2, wherein R 1  and R 2  that are plurally present may be the same or different.