US2014141601A1PendingUtilityA1

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

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Assignee: CHAUDHARI KARINPriority: May 28, 2008Filed: Jan 2, 2014Published: May 22, 2014
Est. expiryMay 28, 2028(~1.9 yrs left)· nominal 20-yr term from priority
Inventors:Praveen Chaudhari
H10P 14/3462H10P 14/3458H10P 14/3456H10P 14/3431H10P 14/3428H10P 14/3421H10P 14/3411H10P 14/3238H10P 14/3202H10P 14/2923H10P 14/2922H10P 14/279H10P 14/274H10P 14/263H10P 14/26H10P 14/24H10F 77/707H10F 77/703H10F 77/30H10F 71/00H10F 19/20H10F 10/161H10F 10/142H10F 71/121Y02P70/50C30B 25/183C30B 29/06C30B 23/025C30B 25/02C30B 11/12Y02E10/544Y02E10/547H01L 21/02625H01L 21/02422H01L 21/02598H01L 21/02595H01L 21/0256H01L 21/02546H01L 21/02439H01L 21/02532
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Claims

Abstract

A method is provided for producing field effect transistors (FETs) for display applications. The method involves low temperature deposition of semiconductor films on inexpensive substrates such as ordinary soda-lime glass or borosilicate glass.

Claims

exact text as granted — not AI-modified
1 . A method of manufacturing Field Effect Transistors (FETS), comprising the steps of:
 providing a substrate; and   depositing a semiconductor film onto the substrate, the semiconductor film being deposited from a eutectic liquid, said semiconductor being deposited on said substrate at a deposition temperature, said deposition temperature being between a eutectic temperature of said eutectic liquid and below a softening temperature of said substrate.   
     
     
         2 . The method of  claim 1 , wherein said substrate is soda-lime glass. 
     
     
         3 . The method of  claim 1 , wherein said substrate is borosilicate glass. 
     
     
         4 . The method of  claim 1 , wherein said substrate is sapphire glass. 
     
     
         5 . The method of  claim 1 , wherein said substrate is an organic material. 
     
     
         6 . The method of  claim 1 , wherein the semiconductor film is silicon. 
     
     
         7 . The method of  claim 1 , wherein the semiconductor film is Cadmium Selenide. 
     
     
         8 . The method of  claim 1 , wherein the semiconductor film is Germanium. 
     
     
         9 . The method of  claim 1 . wherein the semiconductor film is Gallium Arsenide. 
     
     
         10 . The method of  claim 1 , wherein the semiconductor film is Gallium. 
     
     
         11 . The method of  claim 1 , wherein said eutectic liquid comprises at least one of the following metals: Al, Au, or Sn. 
     
     
         12 . The method of  claim 1 , wherein said substrate has a buffer layer comprising Al 2 O 3  and/or MgO. 
     
     
         13 . The method of  claim 1 , wherein said substrate is a metal tape.

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