Semiconductor memory device and method of manufacturing the same

Abstract

The present technology includes a semiconductor memory device, including a channel layer and interlayer insulation layers surrounding the channel layer. The interlayer insulation layers are stacked with a trench interposed therebetween. A seed pattern is formed on a surface of the trench and a metal layer is formed on the seed pattern in the trench.

What is claimed is: 
     
         1 . A semiconductor memory device, comprising:
 a channel layer;   interlayer insulation layers surrounding the channel layer, wherein the interlayer insulation layers are stacked with a trench interposed therebetween;   a seed pattern formed on a surface of the trench; and   a metal layer formed on the seed pattern in the trench.   
     
     
         2 . The semiconductor memory device of  claim 1 , wherein the metal layer covers an entire surface of the seed pattern. 
     
     
         3 . The semiconductor memory device of  claim 1 , wherein a width of each of the interlayer insulation layers is greater than a width of the seed pattern. 
     
     
         4 . The semiconductor memory device of  claim 1 , wherein a width of the metal layer is greater or less than a width of each of the interlayer insulation layers. 
     
     
         5 . The semiconductor memory device of  claim 1 , further comprising:
 barrier metal patterns formed between the seed pattern and the channel layer and between the seed pattern and the interlayer insulation layers.   
     
     
         6 . The semiconductor memory device of  claim 1 , wherein the metal layer is formed of tungsten. 
     
     
         7 . A method of manufacturing a semiconductor memory device, the method comprising:
 forming interlayer insulation layers surrounding a channel layer, wherein the interlayer insulation layers are stacked with a trench interposed therebetween;   forming a seed film on a surface of the trench and on surfaces of the interlayer insulation layers;   forming a sacrificial pattern in the trench;   forming a seed pattern in the trench by etching the seed film by using the sacrificial pattern as an etching barrier; and   growing a metal layer from the seed pattern in the trench.   
     
     
         8 . The method of  claim 7 , wherein the forming of the interlayer insulation layers surrounding the channel layer comprises:
 alternately stacking the interlayer insulation layers and sacrificial layers;   forming the channel layer through the interlayer insulation layers and the sacrificial layers;   forming a slit through the interlayer insulation layers and the sacrificial layers to expose the sacrificial layers; and   forming the trench by removing the sacrificial layers.   
     
     
         9 . The method of  claim 7 , further comprising:
 forming a barrier metal layer along a surface of the trench and along surfaces of the interlayer insulation layers before the forming of the seed film.   
     
     
         10 . The method of  claim 7 , further comprising:
 forming a barrier metal pattern under the seed pattern by etching the barrier metal layer by using the sacrificial pattern as an etching barrier.   
     
     
         11 . The method of  claim 7  wherein a width of the sacrificial pattern is less than a width of each of the interlayer insulation layers. 
     
     
         12 . The method of  claim 7 , wherein the metal layer is to cover an entire surface of the seed pattern. 
     
     
         13 . The method of  claim 7 , wherein a width of the metal layer is greater or less than a width of each of the interlayer insulation layers. 
     
     
         14 . The method of  claim 7 , wherein the forming the seed film comprises:
 forming the seed film using a reducing gas.   
     
     
         15 . The method of  claim 14 , wherein the growing the metal layer comprises:
 removing the reducing gas using a purge gas; and   substituting the seed pattern with the metal layer via a metal source gas.