US2014153139A1PendingUtilityA1

Method of manufacturing magnetoresistive element

Assignee: TOSHIBA KKPriority: Sep 1, 2010Filed: Feb 10, 2014Published: Jun 5, 2014
Est. expirySep 1, 2030(~4.1 yrs left)· nominal 20-yr term from priority
G11B 5/3983G01R 33/098H01F 10/3295G01R 33/093H01F 41/325G11B 5/3903H01F 41/303B82Y 40/00H01F 10/3259G11B 5/3163B82Y 25/00Y10T428/1129H01F 10/3272H10N 50/01
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Claims

Abstract

According to one embodiment, a method of manufacturing a magnetoresistive element includes a layered structure and a pair of electrodes, the layered structure including a cap layer, a magnetization pinned layer, a magnetization free layer, a spacer layer and a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and including an oxide, the method including forming a film including a base material of the functional layer, performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical, and performing a reduction treatment using a reducing gas on the film after the oxidation treatment.

Claims

exact text as granted — not AI-modified
1 . A magnetoresistive element manufactured by a method and comprising a layered structure and a pair of electrodes allowing an electric current to flow through the layered structure in a thickness direction,
 the layered structure comprising:
 a cap layer; 
 a magnetization pinned layer; 
 a magnetization free layer provided between the cap layer and the magnetization pinned layer; 
 a spacer layer provided between the magnetization pinned layer and the magnetization free layer; and 
 a functional layer provided in the magnetization pinned layer, between the magnetization pinned layer and the spacer layer, between the spacer layer and the magnetization free layer, in the magnetization free layer, or between the magnetization free layer and the cap layer and comprising an oxide containing at least one element selected from the group consisting of Zn, In, Sn, and Cd and at least one element selected from the group consisting of Fe, Co, and Ni; 
   the method comprising:
 forming a film comprising a base material of the functional layer; 
 performing an oxidation treatment on the film using a gas containing oxygen in a form of at least one selected from the group consisting of molecule, ion, plasma and radical; and 
   
       performing a reduction treatment using a reducing gas on the film after the oxidation treatment. 
     
     
         2 . A magnetic head assembly comprising: a suspension, the magnetoresistive element of  claim 1  mounted at one end of the suspension, and an actuator arm connected to the other end of the suspension. 
     
     
         3 . A magnetic recording apparatus comprising:
 the magnetic head assembly of  claim 2  and a magnetic recording medium on which information is to be recorded, the information on the magnetic recording medium being read by the magnetoresistive element mounted to the magnetic head assembly.   
     
     
         4 . The magnetic recording apparatus of  claim 3 , wherein the magnetoresistive elements are disposed in matrix.

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