Processing and Cleaning Substrates

Abstract

The embodiments describe methods for controlling the particles generated when cleaning and drying a wafer in a spin rinse dryer (SRD) module. In some embodiments, the substrate surface is cooled by dispensing deionized (DI) water across the surface of the substrate, while the substrate rests on the SRD chuck. In addition, a method for controlling the particles generated when sleeves in a processing module or SRD contact a substrate surface during a clamping operation or when the sleeves are removed from the substrate surface is provided. A bottom edge or lip of the sleeves and/or the surface of the wafer contacting the sleeve is wetted during clamping/unclamping operations. Alternatively, the substrate may be wetted prior to clamping/unclamping operations.

What is claimed is: 
     
         1 . A method, comprising the steps of:
 defining a plurality of site isolated regions on a top surface of a substrate;   processing a first one of the site isolated regions differently from at least a second one of the site isolated regions;   transferring the substrate to a chuck in a first cleaning module, wherein the chuck contacts a first part of a bottom surface of the substrate but does not contact a second part of the bottom surface of the substrate;   dispensing a cleaning chemistry onto a top surface of the substrate, wherein a temperature of the cleaning chemistry is higher than an ambient temperature;   dispensing a fluid onto the top surface of the substrate, wherein a temperature of the fluid is at or substantially near the ambient temperature; and   drying the top surface of the substrate;   wherein the substrate remains on the chuck during the dispensing of the cleaning chemistry, the dispensing of the fluid, and the drying; and   wherein the chuck radiates heat to the first part of the bottom surface of the substrate after the dispensing of the cleaning chemistry.   
     
     
         2 . The method of  claim 1 , wherein the substrate is stationary for a period of time with the fluid disposed thereon after the dispensing of the fluid and before the drying. 
     
     
         3 . The method of  claim 1 , wherein the fluid comprises a neutral chemistry, a solvent, a cooling fluid, or deionized water. 
     
     
         4 . The method of  claim 1 , wherein the fluid is dispensed onto a first part of the top surface of the substrate located over the first part of the bottom surface of the substrate being heated by contact with the chuck. 
     
     
         5 . The method of  claim 1 , wherein a distribution of the fluid over the top surface of the substrate preferentially cools a part of the substrate heated by the chuck, thereby reducing a temperature difference between the first part of the bottom surface of the substrate and the second part of the bottom surface of the substrate. 
     
     
         6 . The method of  claim 1 , wherein the fluid is dispensed for between 10 seconds and 60 seconds. 
     
     
         7 . The method of  claim 1 , wherein the drying comprises rotating the substrate while the substrate rests on the chuck. 
     
     
         8 . The method of  claim 7 , wherein the rotating begins after the dispensing of the fluid terminates. 
     
     
         9 . The method of  claim 1 , wherein the temperature of the cleaning chemistry is about 80C. 
     
     
         10 . The method of  claim 1 , further comprising eliminating vapor in the cleaning module. 
     
     
         11 . The method of  claim 1 , further comprising reducing vapor condensation on a wall of the cleaning module. 
     
     
         12 . The method of  claim 1 , wherein the first part of the bottom surface of the substrate is a central portion. 
     
     
         13 . The method of  claim 1 , wherein the second part of the bottom surface of the substrate is a periphery around the first part of the bottom surface of the substrate. 
     
     
         14 . The method of  claim 1 , further comprising cleaning a portion of the substrate in a second cleaning module after the processing and before the transferring to the chuck in the first cleaning module, wherein the substrate is supported in the second cleaning module by a plurality of cups. 
     
     
         15 . The method of  claim 14 , further comprising:
 sealing one of the cups over each of the site-isolated regions in the second cleaning module; and   cleaning an area of the top surface of the substrate outside the site-isolated regions.   
     
     
         16 . The method of  claim 14 , wherein a single assembly functions as a bottom of the second cleaning module and a top of the first cleaning module. 
     
     
         17 . The method of  claim 1 , wherein the defining of the plurality of site isolated regions comprises sealing a plurality of reactors to the top surface of the substrate, wherein each reactor isolates a separate region. 
     
     
         18 . The method of  claim 1 , wherein the processing further comprises clamping and unclamping the substrate from a plurality of reactor sleeves or cups, wherein a wetting agent is provided between the top surface of the substrate and a sealing surface of the reactor sleeve or cup before the clamping or unclamping. 
     
     
         19 . The method of  claim 18 , wherein the wetting agent is applied to the sealing surface of the reactor sleeve or cup. 
     
     
         20 . The method of  claim 18 , wherein the wetting agent is applied to the substrate.