Method of magnetic meida manufacturing

Abstract

The embodiments disclose a method of creating a mask by depositing a protection layer that mechanically strengthens patterned features that are imprinted into a resist layer that is deposited onto a magnetic layer, implanting mechanically strengthened patterned resist layer features into the magnetic layer using ion implantation and removing the resist layer and the mask to expose at least a portion of the magnetic layer.

1 . A method comprising:
 depositing a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and   creating the magnetic recording features in areas not underneath the resist features through ion implantation.   
     
     
         2 . (canceled) 
     
     
         3 . The method of  claim 1 , wherein the deposition of the conformal protection layer comprises performing chemical vapor deposition (CVD). 
     
     
         4 . The method of  claim 1 , wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC). 
     
     
         5 . The method of  claim 1 , further comprising etching at least a portion of the conformal protection layer by performing an isotropic plasma etch. 
     
     
         6 - 7 . (canceled) 
     
     
         8 . The method of  claim 1 , further comprising lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination. 
     
     
         9 - 20 . (canceled) 
     
     
         21 . An apparatus, comprising:
 means for depositing a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and   an ion implantation system configured to create the magnetic recording features in areas not underneath the resist features.   
     
     
         22 . The apparatus of  claim 21 , wherein the means for depositing the conformal protection layer comprises a chemical vapor deposition (CVD) system. 
     
     
         23 . The apparatus of  claim 21 , wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC). 
     
     
         24 . The apparatus of  claim 21 , further comprising an isotropic plasma etcher configured to etch at least a portion of the conformal protection layer. 
     
     
         25 . The apparatus of  claim 21 , further comprising means for lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination. 
     
     
         26 . The apparatus of  claim 21 , further comprising a chemical vapor deposition system configured to deposit a carbon over-coat (COC) layer. 
     
     
         27 . The apparatus of  claim 21 , further comprising a sputtering system configured to deposit a carbon over-coat (COC) layer. 
     
     
         28 . An apparatus comprising:
 a deposition system configured to deposit a conformal protection layer on a resist layer of a substrate, the substrate comprising the resist layer over a magnetic layer, the resist layer comprising one or more resist features, wherein the resist features define one or more magnetic recording features; and   an ion implantation system for creating the magnetic recording features in areas not underneath the resist features.   
     
     
         29 . The apparatus of  claim 28 , wherein the deposition system comprises a chemical vapor deposition (CVD) system. 
     
     
         30 . The apparatus of  claim 28 , wherein the conformal protection layer comprises carbon (C), cyanide (CN), or silicon carbide (SiC). 
     
     
         31 . The apparatus of  claim 28 , further comprising an isotropic plasma etcher configured to etch at least a portion of the conformal protection layer. 
     
     
         32 . The apparatus of  claim 28 , further comprising means for lifting off residue of the resist layer using solvent, baking and plasma strip processes separately or in combination. 
     
     
         33 . The apparatus of  claim 28 , further comprising a chemical vapor deposition system configured to deposit a carbon over-coat (COC) layer. 
     
     
         34 . The apparatus of  claim 28 , further comprising a sputtering system configured to deposit a carbon over-coat (COC) layer. 
     
     
         35 . The method of  claim 1 , further comprising depositing a carbon over-coat (COC) layer over the magnetic layer through CVD.