US2014183719A1PendingUtilityA1

Electronic assembly includes a composite carrier

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Assignee: TEXAS INSTRUMENTS INCPriority: Apr 29, 2010Filed: Mar 10, 2014Published: Jul 3, 2014
Est. expiryApr 29, 2030(~3.8 yrs left)· nominal 20-yr term from priority
H10W 74/00H10W 90/297H10W 72/0198H10W 72/952H10W 72/942H10W 72/29H10W 90/00H10W 72/07236H10W 80/314H10W 90/724H10W 72/247H10W 72/07254H10W 90/722H10W 72/252H10W 72/244H10W 74/15H10P 72/7434H10P 72/7418H10P 72/7416H10P 72/74H10W 90/701H10W 74/117H10W 74/019H10W 74/012H10W 20/20H10W 74/014H10W 70/69H01L 23/49894
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Claims

Abstract

An electronic assembly includes a composite carrier. The composite carrier includes a package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer. The composite carrier minimizes effects of the CTE mismatch between the die and the package substrate during assembly reduces warpage of the die. A plurality of first die having a thickness having their topside contacts attached to topside substrate pads on a top surface of said package substrate.

Claims

exact text as granted — not AI-modified
I claim: 
     
         1 - 30 . (canceled) 
     
     
         31 . An electronic assembly, comprising:
 a composite carrier comprising an organic package substrate including at least one embedded metal layer having its bottom surface secured to a semiconductor wafer, and   a plurality of first die having having their topside contacts attached to topside substrate pads on a top surface of said package substrate.   
     
     
         32 . The electronic assembly of  claim 31 , wherein said plurality of first die comprise through substrate via (TSV) die that include TSVs that have said topside contacts coupled to said TSVs attached to topside substrate pads of said package substrate. 
     
     
         33 . The electronic assembly of  claim 31 , further comprising a plurality of singulated second die attached to bottomside contacts that are coupled to said TSVs. 
     
     
         34 . The electronic assembly of  claim 31 , wherein said semiconductor wafer comprises a silicon wafer. 
     
     
         35 . The electronic assembly of  claim 31 , wherein said plurality of first die are disposed on a first wafer. 
     
     
         36 . The electronic assembly of  claim 31 , wherein said plurality of first die have a thickness of 20 to 100 μm having.

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