Void-Free Metallic Filled High Aspect Ratio Openings

Abstract

One embodiment is a device which includes at least one filled via or trench wherein the at least one filled via or trench includes void-free filled metal or alloy, and the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1.

What I claim is: 
     
         1 . A device comprising at least one filled via or trench wherein:
 the at least one filled via or trench comprises void-free filled metal or metal alloy; and   the filled via or trench has an aspect ratio in a range from 9:1 to about 28:1.   
     
     
         2 . The device of  claim 1  wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys. 
     
     
         3 . The device of  claim 2  wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm. 
     
     
         4 . The device of  claim 2  wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm. 
     
     
         5 . The device of  claim 2  wherein:
 the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and 
 one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers. 
 
     
     
         6 . The device of  claim 5  further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers;
 wherein the void-free filled metal or metal alloy comprises copper or copper alloy. 
 
     
     
         7 . The device of  claim 6  wherein the filled via or trench is a filled via. 
     
     
         8 . The device of  claim 1  wherein the filled via or trench has an aspect ratio in a range from 10:1 to about 28:1. 
     
     
         9 . The device of  claim 8  wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys. 
     
     
         10 . The device of  claim 9  wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm. 
     
     
         11 . The device of  claim 9  wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm. 
     
     
         12 . The device of  claim 9  wherein:
 the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and 
 one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers. 
 
     
     
         13 . The device of  claim 12  further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers;
 wherein the void-free filled metal or metal alloy comprises copper or copper alloy. 
 
     
     
         14 . The device of  claim 13  wherein the filled via or trench is a filled via. 
     
     
         15 . The device of  claim 1  wherein the filled via or trench has an aspect ratio in a range from 12:1 to about 28:1. 
     
     
         16 . The device of  claim 15  wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys. 
     
     
         17 . The device of  claim 16  wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm. 
     
     
         18 . The device of  claim 16  wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm. 
     
     
         19 . The device of  claim 16  wherein:
 the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and 
 one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers. 
 
     
     
         20 . The device of  claim 19  further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers; and
 the void-free filled metal or alloy comprises copper or copper alloy. 
 
     
     
         21 . The device of  claim 20  wherein the filled via or trench is a filled via. 
     
     
         22 . The device of  claim 1  wherein the filled via or trench has an aspect ratio in a range from 14:1 to about 28:1. 
     
     
         23 . The device of  claim 22  wherein the void-free filled metal or metal alloy comprises a material selected from a group consisting of Cu, Ag, Cu alloys, and Ag alloys. 
     
     
         24 . The device of  claim 23  wherein the filled via or trench has a width from about 0.05 μm to about 0.35 μm. 
     
     
         25 . The device of  claim 23  wherein the filled via or trench has a width from about 0.05 μm to 0.10 μm. 
     
     
         26 . The device of  claim 23  wherein:
 the filled via or trench is surrounded by one or more dielectric layers along its sidewalls; and 
 one or more barrier layers are interposed between the void-free filled metal or metal alloy and the one or more dielectric layers. 
 
     
     
         27 . The device of  claim 26  further comprising a seed layer interposed between the void-free filled metal or metal alloy and the one or more barrier layers; and
 the void-free filled metal or alloy comprises copper or copper alloy. 
 
     
     
         28 . The device of  claim 27  wherein the filled via or trench is a filled via. 
     
     
         29 . The device of  claim 1  wherein the filled via or trench is a filled via. 
     
     
         30 . The device of  claim 8  wherein the filled via or trench is a filled via. 
     
     
         31 . The device of  claim 15  wherein the filled via or trench is a filled via. 
     
     
         32 . The device of  claim 22  wherein the filled via or trench is a filled via.