Methods of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon

Abstract

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

1 - 13 . (canceled) 
     
     
         14 . A method of making a Vapor-Liquid-Solid (VLS) thin-film semiconductor device, comprising the steps of: providing a substrate, and vapor depositing a semiconductor film onto said substrate, said semiconductor film being deposited out of a eutectic liquid, said liquid comprising a solid and liquid eutectic alloy, said solid part deposited onto said substrate. 
     
     
         15 . The method of  claim 16 , wherein said substrate is glass. 
     
     
         16 . The method of  claim 16 , wherein said substrate is a metal tape. 
     
     
         17 . The method of  claim 16 , wherein said semiconductor device is a photovoltaic cell. 
     
     
         18 . The method of  claim 16 , wherein said semiconductor device is a Field-Effect-Transistor (FET). 
     
     
         19 . The method of claim  1 , wherein said semiconductor film is etched. 
     
     
         20 . The method of  claim 21 , wherein said etched film is used as the surface on which thicker film can be deposited. 
     
     
         21 . The method of  claim 16 , wherein said substrate is buffered with MgO, crystalline Al 2 03, or TiN. 
     
     
         22 . The method of  claim 16 , wherein said semiconductor is comprised of Si, Ge, GaAs, CdS. 
     
     
         23 . The method of  claim 16 , wherein said eutectic liquid is comprised in part by Au, Al, Ag, Sn, In. 
     
     
         24 . The method of  claim 16 , where said substrate is buffered with MgO, crystalline Al203, or TiN. 
     
     
         25 . The method of  claim 16 , where said semiconductor is comprised of Si, Ge, GaAs, CdS. 
     
     
         26 . The method of  claim 16 , where said eutectic liquid is comprised in part by Au, Al, Ag, Sn, In.