Film deposition material, sealing film using the same and use thereof

Abstract

The present invention relates to a film composed of a carbon-containing silicon oxide formed by CVD using, as the raw material, an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom, which is used as a sealing film for a gas barrier equipment and materials, an FPD device, a semiconductor device and the like.

1 . A film deposition material for a chemical vapor deposition method, comprising:
 an organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom.   
     
     
         2 . The film deposition material according to  claim 1 ,
 wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a disiloxane compound represented by the following formula (1):   
       
         
           
           
               
               
           
         
         wherein each of R 1  and R 2  represents a hydrocarbon group having a carbon number of 1 to 20; R 1  and R 2  may bond with each other to form a cyclic structure; and each of R 3  and R 4  represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom. 
       
     
     
         3 . The film deposition material according to  claim 1 ,
 wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a silane compound represented by the following formula (2):   
       
         
           
           
               
               
           
         
         wherein each of R 5  and R 6  represents a hydrocarbon group having a carbon number of 1 to 20; R 5  and R 6  may bond with each other to form a cyclic structure; each of R 7 , R 8  and R 9  represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom; and m represents an integer of 1 to 20. 
       
     
     
         4 . The film deposition material according to  claim 1 ,
 wherein the organosilicon compound having a secondary hydrocarbon group directly bonded to at least one silicon atom and having an atomic ratio of 0.5 or less oxygen atom with respect to 1 silicon atom is a cyclic silane compound represented by the following formula (3):   
       
         
           
           
               
               
           
         
         wherein each of R 10  and R 11  represents a hydrocarbon group having a carbon number of 1 to 20; R 10  and R 11  may bond with each other to form a cyclic structure; R 12  represents a hydrocarbon group having a carbon number of 1 to 20 or a hydrogen atom; and n represents an integer of 4 to 40. 
       
     
     
         5 . The film deposition material according to  claim 2 ,
 wherein in formula (1), (2) or (3), both R 1  and R 2 , both R 5  and R 6  or both R 10  and R 11  are methyl or are methyl and ethyl, respectively.   
     
     
         6 . The film deposition material according to  claim 2 ,
 wherein the organosilicon compound is 1,3-diisopropyldisiloxane, 1,3-diisopropyl-1,3-dimethyldisiloxane, 1,3-diisopropyl-1,1,3,3-tetramethyldisiloxane, 1,3-di-sec-butyldisiloxane, 1,3-di-sec-butyl-1,3-dimethyldisiloxane or 1,3-di-sec-butyl-1,1,3,3-tetramethyldisiloxane.   
     
     
         7 . The film deposition material according to  claim 3 ,
 wherein the organosilicon compound is isopropylsilane, isopropylmethylsilane, isopropyldimethylsilane, diisopropylsilane, diisopropylmethylsilane, triisopropylsilane, sec-butylsilane, sec-butylmethylsilane, sec-butyldimethylsilane, di-sec-butylsilane, di-sec-butylmethylsilane or tri-sec-butylsilane.   
     
     
         8 . The film deposition material according to  claim 4 ,
 wherein the organosilicon compound is 1,2,3,4-tetraisopropylcyclotetrasilane, 1,2,3,4,5-pentaisopropylcyclopentasilane, 1,2,3,4,5,6-hexaisopropylcyclohexasilane, 1,1,2,2,3,3,4,4-octaisopropylcyclotetrasilane, 1,1,2,2,3,3,4,4,5,5-decaisopropylcyclopentasilane or 1,1,2,2,3,3,4,4,5,5,6,6-undecaisopropylcyclohexasilane.   
     
     
         9 . The film deposition material according to  claim 1 ,
 wherein the chemical vapor deposition method is a plasma enhanced chemical vapor deposition method.   
     
     
         10 . The film deposition material according to  claim 1 ,
 wherein the chemical vapor deposition method is a catalytic chemical vapor deposition method.   
     
     
         11 . A sealing film, deposited by a chemical vapor deposition method using the film deposition material according to  claim 1 . 
     
     
         12 . A sealing film, obtained by further subjecting the sealing film according to  claim 11  to a heat treatment, an ultraviolet irradiation treatment or an electron beam treatment. 
     
     
         13 . A gas barrier equipment and materials, using the sealing film according to  claim 11  as a gas barrier layer. 
     
     
         14 . A flat-panel display device, comprising:
 the sealing film according to  claim 11 .   
     
     
         15 . A semiconductor device, comprising:
 the sealing film according to  claim 11 .   
     
     
         16 . The film deposition material according to  claim 3 ,
 wherein in formula (1), (2) or (3), both R 1  and R 2 , both R 5  and R 6  or both R 10  and R 11  are methyl or are methyl and ethyl, respectively.   
     
     
         17 . The film deposition material according to  claim 4 ,
 wherein in formula (1), (2) or (3), both R 1  and R 2 , both R 5  and R 6  or both R 10  and R 11  are methyl or are methyl and ethyl, respectively.