Method of forming photoresist structure

Abstract

A method for forming a photoresist structure is provided The method includes the step of forming a photoresist layer on a substrate, the step of exposing a portion of the photoresist layer to form an exposed portion of the photoresist layer, and the step of removing the photoresist layer except the exposed portion with a solvent, so as to form the photoresist structure, wherein the photoresist layer has a polymer having a structure represented by formula (I). The method of the present invention can generate a photoresist with an even thickness on devices with complex geometries or three-dimensional substrates. Thus, it can be applied to tissue engineering scaffolds, three-dimensional cell cultivation system and novel bio-microelectromechnical elements.

What is claimed is: 
     
         1 . A method for forming a photoresist structure, comprising the following steps of:
 forming a photoresist layer above a substrate;   exposing a portion of the photoresist layer to form an exposed portion of the photoresist layer; and   removing the photoresist layer except the exposed portion with a solvent, so as to form the photoresist structure,   wherein the photoresist layer is comprised of a polymer having a structure represented by formula (I):   
       
         
           
           
               
               
           
         
         wherein R is benzoyl or a hydrogen atom; 
         m and n are each independently an integer in a range from 1 to 150; and 
         r is an integer in a range from 1 to 20000. 
       
     
     
         2 . The method of  claim 1 , wherein R is a hydrogen atom and r is 1, and the structure of the polymer is represented by formula (II): 
       
         
           
           
               
               
           
         
         wherein m:n is 1:1. 
       
     
     
         3 . The method of  claim 1 , wherein the photoresist layer has a thickness in a range from 70 nm to 2.5 μm. 
     
     
         4 . The method of  claim 1 , wherein the photoresist layer is formed by chemical vapor deposition. 
     
     
         5 . The method of  claim 1 , wherein the step of exposing is performed by using an ultraviolet light. 
     
     
         6 . The method of  claim 1 , wherein the solvent is acetone. 
     
     
         7 . The method of  claim 1 , further comprising the step of forming a first polymer layer on the substrate, wherein the photoresist layer is formed on the first polymer layer. 
     
     
         8 . The method of  claim 7 , further comprising the step of forming a second polymer layer on the photoresist layer, so as to allow the photoresist layer to be interposed between the first polymer layer and the second polymer layer. 
     
     
         9 . The method of  claims 8 , wherein the first polymer layer and the second polymer layer are each formed by chemical vapor deposition.