Composite cutter substrate to mitigate residual stress

Abstract

A cutting element may include a polycrystalline diamond layer and a reduced-CTE substrate comprising diamond particles disposed in a matrix material, wherein the diamond particles have a contiguity of 15% or less. Also, a cutting element may include a polycrystalline diamond layer and a reduced-CTE substrate comprising a matrix material, at least one diamond-filled region, and embedded diamond particles.

1 - 37 . (canceled) 
     
     
         38 . A cutting element comprising:
 a polycrystalline diamond layer;   a reduced-CTE substrate comprising diamond particles disposed in a matrix material, wherein the diamond particles have a contiguity of 15% or less.   
     
     
         39 . The cutting element of  claim 38 , wherein an interface surface is formed between the polycrystalline diamond layer and the reduced-CTE substrate, a portion of the interface surface being formed from an upper surface of the at least one diamond-filled region, and wherein the at least one diamond-filled region extends from the interface surface into the reduced-CTE substrate. 
     
     
         40 . The cutting element of  claim 38 , wherein the polycrystalline diamond layer is thermally stable. 
     
     
         41 . The cutting element of  claim 38 , wherein the matrix material comprises tungsten carbide. 
     
     
         42 . The cutting element of  claim 41 , wherein the matrix material further comprises a metal selected from alloys of cobalt, iron, nickel, or copper. 
     
     
         43 . The cutting element of  claim 38 , wherein the polycrystalline diamond layer has a diamond content greater than about 92 percent by volume. 
     
     
         44 . A cutting element comprising:
 a polycrystalline diamond layer;   a reduced-CTE substrate comprising a matrix material, at least one diamond-filled region, and diamond particles embedded within the matrix material.   
     
     
         45 . The cutting element of  claim 44 , wherein an interface surface is formed between the polycrystalline diamond layer and the reduced-CTE substrate, a portion of the interface surface being formed from an upper surface of the at least one diamond-filled region, and wherein the at least one diamond-filled region extends a first depth from the interface surface into the reduced-CTE substrate. 
     
     
         46 . The cutting element of  claim 44 , wherein the polycrystalline diamond layer is thermally stable. 
     
     
         47 . The cutting element of  claim 44 , wherein the polycrystalline diamond layer has a diamond content greater than about 92 percent by volume. 
     
     
         48 . The cutting element of  claim 44 , wherein the matrix material comprises tungsten carbide. 
     
     
         49 . The cutting element of  claim 48 , wherein the matrix material further comprises a metal selected from alloys of cobalt, iron, nickel, or copper. 
     
     
         50 . The cutting element of  claim 45 , wherein the diamond particles are embedded throughout a second depth from the interface surface into the reduced-CTE substrate. 
     
     
         51 . The cutting element of  claim 50 , wherein the second depth is larger than the first depth. 
     
     
         52 . The cutting element of  claim 50 , wherein the second depth is smaller than the first depth. 
     
     
         53 . The cutting element of  claim 50 , wherein the second depth is about the same as the first depth. 
     
     
         54 . The cutting element of  claim 44 , wherein the first depth is about 0.1 to 0.7 times the thickness of the polycrystalline diamond layer. 
     
     
         55 . The cutting element of  claim 50 , wherein the second depth extends throughout the entire reduced-CTE substrate. 
     
     
         56 . The cutting element of  claim 50 , wherein the embedded diamond particles comprise of at least one of polycrystalline diamond, natural diamond, or synthetic diamond. 
     
     
         57 . The cutting element of  claim 44 , wherein an interface surface is formed between the polycrystalline diamond layer and the reduced-CTE substrate, a portion of the interface surface being formed from the upper surfaces of a plurality of diamond-filled regions, and wherein at least one diamond-filled region extends further in depth from the interface surface into the reduced-CTE substrate than the others.