Led chip resistant to electrostatic discharge and led package including the same

Abstract

A light emitting diode chip and a light emitting diode package including the same. The light emitting diode chip includes a substrate, a light emitting diode section disposed on the substrate, an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. In the light emitting diode chip, the light emitting diode section is disposed together with the inverse parallel diode section.

What is claimed is: 
     
         1 . A light emitting diode chip comprising:
 a substrate;   a light emitting diode section disposed on the substrate; and   an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section.   
     
     
         2 . The light emitting diode chip of  claim 1 , further comprising a reflector covering at least a portion of the inverse parallel diode section. 
     
     
         3 . The light emitting diode chip of  claim 2 , wherein the reflector comprises a distributed Bragg reflector. 
     
     
         4 . The light emitting diode chip of  claim 1 , wherein the light emitting diode section and the inverse parallel diode section each comprise:
 a first conductivity type nitride semiconductor layer;   a second conductivity type nitride semiconductor layer; and   an active layer disposed between the first conductivity type nitride semiconductor layer and the second conductivity type nitride semiconductor layer.   
     
     
         5 . The light emitting diode chip of  claim 4 , further comprising:
 a first electrode pad; and   a second electrode pad,   wherein the first electrode pad is disposed on the inverse parallel diode section, and the second electrode pad is disposed on the light emitting diode section.   
     
     
         6 . The light emitting diode chip of  claim 5 , further comprising:
 a first extension extending from the first electrode pad; and   a second extension extending from the second electrode pad,   wherein:   the first extension is electrically connected to the first conductivity type nitride semiconductor layer of the light emitting diode section; and   the second extension is electrically connected to the first conductivity type nitride semiconductor layer of the inverse parallel diode section.   
     
     
         7 . The light emitting diode chip of  claim 6 , wherein a portion of the first electrode pad is disposed on the second extension. 
     
     
         8 . The light emitting diode chip of  claim 7 , further comprising an insulation layer insulating the first electrode pad from the second extension. 
     
     
         9 . The light emitting diode chip of  claim 6 , wherein the first extension is connected to the first conductivity type nitride semiconductor layer at a plurality of points on the light emitting diode section. 
     
     
         10 . The light emitting diode chip of  claim 9 , wherein:
 the first extension passes through an upper portion of the second conductivity type nitride semiconductor layer of the light emitting diode section; and   the first extension is electrically insulated from the second conductivity type nitride semiconductor layer by the insulation layer.   
     
     
         11 . The light emitting diode chip of  claim 6 , further comprising a second transparent electrode layer disposed between the first electrode pad and the second conductivity type nitride semiconductor layer of the inverse parallel diode section. 
     
     
         12 . The light emitting diode chip of  claim 11 , further comprising a first transparent electrode layer connected to an upper surface of the second conductivity type nitride semiconductor layer of the light emitting diode section,
 wherein the second electrode pad is disposed on the first transparent electrode layer.   
     
     
         13 . The light emitting diode chip of  claim 12 , further comprising a current blocking layer disposed under the first transparent electrode layer below the second electrode pad. 
     
     
         14 . The light emitting diode chip of  claim 11 , further comprising a current blocking layer disposed under the first transparent electrode layer and below the second extension. 
     
     
         15 . The light emitting diode chip of  claim 14 , wherein the current blocking layer comprises a distributed Bragg reflector. 
     
     
         16 . The light emitting diode chip of  claim 6 , wherein the reflector covers at least a portion of the inverse parallel diode section. 
     
     
         17 . The light emitting diode chip of  claim 16 , wherein at least a portion of the reflector extends to the light emitting diode section and is configured to insulate the second extension from a side surface of the light emitting diode section. 
     
     
         18 . The light emitting diode chip of  claim 16 , wherein at least a portion of the reflector extends to the light emitting diode section and is configured to insulate the first extension from the light emitting diode section. 
     
     
         19 . The light emitting diode chip of  claim 16 , wherein:
 the reflector covers the inverse parallel diode section so as to enclose the first electrode pad; and   the reflector comprises an opening through which the first conductivity type nitride semiconductor layer connected to the second extension is exposed.   
     
     
         20 . The light emitting diode chip of  claim 6 , wherein at least one of the first extension and the second extension comprises a reflective metal layer. 
     
     
         21 . A light emitting diode chip comprising:
 a substrate;   a light emitting diode section disposed on the substrate;   an inverse parallel diode section disposed on the substrate;   a first electrode pad disposed on the inverse parallel diode section;   a second electrode pad disposed on the light emitting diode section;   a first extension extending from the first electrode pad and connected to the light emitting diode section; and   a second extension extending from the second electrode pad and connected to the inverse parallel diode section,   wherein the inverse parallel diode section is connected inversely parallel to the light emitting diode section.   
     
     
         22 . The light emitting diode chip of  claim 21 , further comprising a reflector disposed under at least a portion of the second extension. 
     
     
         23 . A light emitting diode package comprising:
 a chip mounting section having a chip mounting face; and   a light emitting diode chip mounted on the chip mounting face,   wherein the light emitting diode chip comprises:
 a substrate; 
 a light emitting diode section disposed on the substrate; and 
 an inverse parallel diode section disposed on the substrate and connected inversely parallel to the light emitting diode section. 
   
     
     
         24 . The light emitting diode package of  claim 23 , wherein the light emitting diode chip further comprises a reflector covering at least a portion of the inverse parallel diode section.