Heating Configuration for Use in Thermal Processing Chambers

Abstract

An apparatus for heat treating semiconductor wafers is disclosed. The apparatus includes a heating device which contains an assembly linear lamps for emitting light energy onto a wafer. The linear lamps can be placed in various configurations. In accordance with the present invention, tuning devices which are used to adjust the overall irradiance distribution of the light energy sources are included in the heating device. The tuning devices can be, for instance, are lamps or lasers.

1 - 25 . (canceled) 
     
     
         26 . An apparatus for heat treating semiconductor substrates, the apparatus comprising:
 a thermal processing chamber adapted to contain a semiconductor substrate;   a radiant heating device configured to heat a semiconductor substrate in the chamber during processing comprising a plurality of lamps and at least one tuning device, wherein the semiconductor substrate defines a top surface, a bottom surface, and an outer edge, and wherein the at least one tuning device emits radiant light energy and is positioned outside of the outer edge of the semiconductor substrate and arranged in a direction that is parallel to the top and bottom surfaces of the semiconductor substrate such that the at least one tuning device is configured to emit radiant light energy onto the outer edge of the semiconductor substrate from a side.   
     
     
         27 . The apparatus set forth in  claim 26 , wherein the tuning device is configured to irradiate a semiconductor substrate contained in the chamber. 
     
     
         28 . The apparatus set forth in  claim 26 , wherein the at least one tuning device is positioned so that at least a portion of light energy impinges on the outer edges of a semiconductor substrate contained in the chamber;
 wherein the outer edges of a semiconductor substrate comprise the outer 3 to 5 millimeters of the semiconductor substrate.   
     
     
         29 . The apparatus as set forth in  claim 26 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         30 . The apparatus as set forth in  claim 26 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         31 . The apparatus as set forth in  claim 26 , further comprising a substrate holder configured to support a semiconductor substrate in the thermal processing chamber. 
     
     
         32 . The apparatus as set forth in  claim 31 , wherein the substrate holder is further configured to rotate a semiconductor substrate in the thermal processing chamber. 
     
     
         33 . The apparatus as set forth in  claim 26 , wherein the apparatus includes a plurality of tuning devices built into a side of the chamber. 
     
     
         34 . The apparatus as set forth in  claim 26 , wherein the at least one tuning device comprises an arc lamp. 
     
     
         35 . The apparatus as set forth in  claim 26 , further comprising a radiation sensing device for measuring a temperature of a semiconductor substrate contained within the thermal processing chamber, the apparatus further comprising a system controller in communication with the radiation sensing device, the system controller configured to control the at least one tuning device based upon information received from the temperature sensing device. 
     
     
         36 . An apparatus for heat treating semiconductor substrates, the apparatus comprising:
 a thermal processing chamber adapted to contain a semiconductor substrate;   a radiant heating device configured to heat a semiconductor substrate in the chamber during processing comprising a plurality of lamps and at least one tuning device, wherein the semiconductor substrate defines a top surface, a bottom surface, and an outer edge, and wherein the at least one tuning device emits radiant light energy and is positioned outside of the outer edge of the semiconductor substrate and arranged in a direction that is parallel to the top and bottom surfaces of the semiconductor substrate such that the at least one tuning device is configured to emit radiant light energy onto the outer edge of the semiconductor substrate from a side.   
     
     
         37 . The apparatus as set forth in  claim 36 , wherein the tuning device emits a laser beam that delivers power of greater than 10 watts. 
     
     
         38 . The apparatus as set forth in  claim 36 , further comprising a substrate holder configured to support and rotate a wafer in the thermal processing chamber. 
     
     
         39 . The apparatus as set forth in  claim 36 , wherein the at least one tuning device comprises an arc lamp. 
     
     
         40 . The apparatus as set forth in  claim 36 , further comprising a radiation sensing device for measuring a temperature of a semiconductor substrate contained within the thermal processing chamber, the apparatus further comprising a system controller in communication with the radiation sensing device, the system controller configured to control the at least one tuning device based upon information received from the temperature sensing device.