Racetrack memory with electric-field assisted domain wall injection for low-power write operation

Abstract

Embodiments are directed to injecting domain walls in a magnetic racetrack memory. In some embodiments, a racetrack comprising a nanowire is coupled with a gate in order to manipulate an anisotropy associated with the nanowire. The racetrack and gate is coupled with a pinning layer configured to establish a magnetization direction in the nanowire.

What is claimed is: 
     
         1 . A magnetic domain wall shift register memory comprising:
 a magnetic nanowire;   a dielectric layer configured to provide a surface anisotropy contribution to the nanowire;   at least one antiferromagnet configured to induce an exchange bias locally on the nanowire; and   a tunnel junction configured to provide a readout of a magnetic domain.   
     
     
         2 . The memory of  claim 1 , wherein the at least one antiferromagnet comprises a synthetic antiferromagnet. 
     
     
         3 . The memory of  claim 1 , further comprising:
 metal contacts configured to contact both ends of the nanowire to shift magnetic domains laterally.   
     
     
         4 . The memory of  claim 1 , wherein an electric field is applied across the nanowire and the dielectric to write the magnetic domain. 
     
     
         5 . The memory of  claim 4 , wherein the magnetic domain is written based on an application of an Oersted field. 
     
     
         6 . The memory of  claim 4 , wherein the magnetic domain is written based on an application of a spin torque write technique. 
     
     
         7 . The memory of  claim 1 , wherein a current is applied to the nanowire to provide the readout at the tunnel junction.