Methods for manufacturing nonplanar graphite-based devices having multiple bandgaps

Abstract

A method for forming a graphite-based device on a substrate having a plurality of zones is provided where the substrate is carbon doped in zones. Each such zone comprises a plurality of dopant profiles. One or more graphene stacks are generated in the doped zones. A graphene stack so generated comprises a non-planar graphene layer characterized by a bending angle, curvature, characteristic dimension, graphene orientation, graphene type, or combinations thereof. A method for forming a graphite-based device on a substrate is provided, the substrate comprising a graphene foundation material and a plurality of zones. The substrate is patterned to form features in the zones. One feature comprises a non-planar surface or at least two adjacent surfaces that are not coplanar. One or more graphene stacks are concurrently generated, at least one of which comprises a non-planar graphene layer overlaying the non-planar surface or the at least two adjacent surfaces.

1 - 7 . (canceled) 
     
     
         8 . A method for forming a graphite-based device on a substrate, the method comprising:
 creating a plurality of graphene foundation layers on the substrate, wherein the plurality of graphene layers comprises one or more non-planar graphene foundation layers; and   concurrently generating a graphene stack from the plurality of graphene foundation layers, wherein the graphene stack comprises a plurality of graphene layers including a first non-planar graphene layer that is characterized by a first feature that is (i) a first bending angle, (ii) a first curvature, (iii) a first characteristic dimension, (iv) a first graphene orientation, (v) a first graphene type, or (vi) a combination thereof, and   wherein the graphene stack comprises a first transition region that partitions at least a portion of the graphene stack into a first portion and a second portion, wherein the first portion of the graphene stack is characterized by more graphene sheets than the second portion of the graphene stack and wherein at least one of the graphene layers in the plurality of graphene layers is common to the first portion and the second portion of the graphene stack.   
     
     
         9 . The method of  claim 8 , wherein the creating the plurality of graphene foundation layers is conducted using oblique angle deposition. 
     
     
         10 . The method of  claim 8 , wherein the creating the plurality of graphene foundation layers comprises:
 conformally depositing a graphene foundation layer, and   anisotropically etching the graphene foundation layer to form a non-planar graphene foundation layer.   
     
     
         11 - 24 . (canceled) 
     
     
         25 . The method of  claim 8 , wherein the first non-planar graphene layer consists of 1 graphene sheet. 
     
     
         26 . The method of  claim 8 , wherein the first non-planar graphene layer consists of between 2 and 100 graphene sheets. 
     
     
         27 . The method of  claim 8 , wherein the first non-planar graphene layer consists of over 100 graphene sheets. 
     
     
         28 - 30 . (canceled) 
     
     
         31 . The method of  claim 8 , wherein the first transition region is characterized by a first bend in the graphene profile. 
     
     
         32 . The method of  claim 8 , wherein the graphene stack comprises a second non-planar graphene layer that is characterized by a second feature that is (i) a second bending angle, (ii) a second curvature, (iii) a second characteristic dimension, (iv) a second graphene orientation, (v) a second graphene type, or (vi) a combination thereof, and
 wherein the graphene stack comprises a second transition region that partitions at least a portion of the graphene stack into the second portion and a third portion, wherein at least one of the first portion, the second portion, and the third portion of the graphene stack is characterized by a different number of graphene sheets than another portion of the graphene stack and wherein at least one of the graphene layers in the plurality of graphene layers is common to the first portion, the second portion, and the third portion of the graphene stack.   
     
     
         33 . The method of  claim 32 , wherein the first portion, the second portion, and the third portion of the graphene stack are each characterized by a different number of graphene sheets. 
     
     
         34 . The method of  claim 32 , wherein the first feature is the first bending angle and the second feature is the second bending angle, and wherein the first bending angle is other than the second bending angle. 
     
     
         35 . The method of  claim 32 , wherein the first feature is the first curvature and the second feature is the second curvature, and wherein the first curvature is other than the second curvature. 
     
     
         36 . The method of  claim 32 , wherein the first feature is the characteristic dimension and the second feature is the second characteristic dimension, and wherein the first characteristic dimension is other than the second characteristic dimension. 
     
     
         37 . The method of  claim 32 , wherein the first feature is the first graphene orientation and the second feature is the second graphene orientation, and wherein the first graphene orientation is other than the second graphene orientation. 
     
     
         38 . The method of  claim 32 , wherein the first feature is the first graphene type and the second feature is the second graphene type, and wherein the first graphene type is other than the second graphene type. 
     
     
         39 . The method of  claim 32 , wherein the second transition region is characterized by a second bend in the graphene profile. 
     
     
         40 . The method of  claim 32 , wherein the first feature is the first bending angle and the second feature is the second bending angle. 
     
     
         41 . The method of  claim 32 , wherein the first feature is the first curvature and the second feature is the second curvature. 
     
     
         42 . The method of  claim 32 , wherein the first feature is the first characteristic dimension and the second feature is the second characteristic dimension. 
     
     
         43 . The method of  claim 32 , wherein the first feature is the first graphene orientation and the second feature is the second graphene orientation. 
     
     
         44 . The method of  claim 32 , wherein the first feature is the first graphene type and the second feature is the second graphene type.