Atomic Layer Deposition Of Films Comprising Si(C)N Using Hydrazine, Azide And/Or Silyl Amine Derivatives

Abstract

Provided are methods for the deposition of films comprising Si(C)N via atomic layer deposition processes. The methods include exposure of a substrate surface to a silicon precursor and a co-reagent comprising a compound selected from the group consisting of N═N═N—R, R 2 N—NR 2 , and (R 3 Si) q NH 3-q , wherein q has a value of between 1 and 3, and each R is independently selected from organosilicons, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.

What is claimed is: 
     
         1 . A method of depositing a film comprising Si(C)N, the method comprising exposing a substrate surface to a silicon precursor and a co-reactant, wherein the silicon precursor contains at least one Si—X bond, wherein X is a halogen, and the co-reactant comprises a compound selected from the group consisting of N═N═N—R, R 2 N—NR 2 , and (R 3 Si) q NH 3-q , wherein q has a value of between 1 and 3, and each R is independently selected from silyl, monomethyl silyl, dimethyl silyl and trimethyl silyl, C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics. 
     
     
         2 . The method of  claim 1 , wherein each R is independently C1-C6 alkyl. 
     
     
         3 . The method of  claim 2 , wherein each R is methyl. 
     
     
         4 . The method of  claim 1 , wherein the co-reactant comprises (R 3 Si) q NH 3-q . 
     
     
         5 . The method of  claim 1 , wherein the co-reactant comprises N-methylhydrazine, 1,1-dimethylhydrazine, or 1,1,2,2-tetramethylhydrazine. 
     
     
         6 . The method of  claim 1 , wherein the co-reactant comprises trimethylsilylazide. 
     
     
         7 . The method of  claim 1 , wherein the silicon precursor has formula (X y H 3-y Si) z Cl 4-z , (X y H 3-y Si)(CH 2 )(SiX p H 2-p )(CH 2 ) (SiX y H 3-y ), or (X y H 3-y Si)(CH 2 ) n (SiX y H 3-y ), wherein X is a halogen selected from Cl, Br and I, y has a value of between 1 and 3, z has a value of between 1 and 3, p has a value of between 0 and 2, and n has a value between 2 and 5. 
     
     
         8 . The method of  claim 1 , wherein the silicon precursor has a formula (X y H 3-y Si) z CH 4-z . 
     
     
         9 . The method of  claim 8 , wherein the silicon precursor has a formula (X y H 3-y Si)(CH 2 ) n (SiX y H 3-y ), wherein X is a halogen selected from Cl, Br and I, y has a value of between 1 and 3, and n has a value between 2 and 5. 
     
     
         10 . The method of  claim 1 , wherein the silicon precursor comprises SiH 4-r X r  or H 3-t X t Si—SiH 3-t X t , wherein each X is a halogen, r has a value of 1 to 4, and t has a value of 1 to 3. 
     
     
         11 . The method of  claim 10 , wherein the silicon precursor comprises monochlorosilane. 
     
     
         12 . The method of  claim 1 , wherein the silicon precursor or the co-reactant comprises carbon, and a film comprising silicon carbonitride is provided. 
     
     
         13 . The method of  claim 1 , wherein a film comprising silicon nitride is provided. 
     
     
         14 . A method of plasma enhanced atomic layer deposition of a film comprising Si(C)N, the method comprising
 a. exposing a substrate surface to a silicon precursor, wherein the silicon precursor contains at least one Si—X bond, wherein X is a halogen; and   b. subsequently exposing a substrate to a co-reactant and striking a plasma, wherein the co-reactant comprises a compound selected from the group consisting of N═N═N—R and R 2 N—NR 2 , wherein q has a value of between 1 and 3, and each R is independently selected from C1-C6 substituted or un-substituted alkanes, branched or un-branched alkanes, substituted or un-substituted alkenes, branched or un-branched alkenes, substituted or un-substituted alkynes, branched or un-branched alkynes or substituted or un-substituted aromatics.   
     
     
         15 . The method of  claim 14 , wherein each R is C1-C6 alkyl. 
     
     
         16 . The method of  claim 15 , wherein each R is methyl. 
     
     
         17 . The method of  claim 14 , wherein the co-reactant comprises N-methylhydrazine, 1,1-dimethylhydrazine, or 1,1,2,2-tetramethylhydrazine. 
     
     
         18 . The method of  claim 14 , wherein the substrate has a temperature of about 50 to about 250° C. 
     
     
         19 . The method of claim  114 , wherein the silicon precursor comprises monochlorosilane. 
     
     
         20 . A method of depositing a film comprising Si(C)N, the method comprising exposing a substrate surface to hexachlorodisilane, dichlorosilane or monochlorosilane, wherein X is a halogen, and the co-reactant comprises a compound selected from the group consisting of N═N═N—R, R 2 N—NR 2 , and (R 3 Si) q NH 3-q , wherein q has a value of between 1 and 3, and each R is independently C1-C6 alkyl.