Method for cleaning components of nitride semiconductor manufacturing apparatus and device for cleaning components of nitride semiconductor manufacturing apparatus

Abstract

A method for cleaning a component of a nitride semiconductor manufacturing apparatus to which has adhered deposits containing nitride semiconductor comprises a step for chemically treating the component of the nitride semiconductor manufacturing apparatus with a cleaning gas containing a chlorine-based gas, and a step for removing the deposits from the component of the nitride semiconductor manufacturing apparatus by spraying with a sublimable solid substance.

1 . A method for cleaning a component of a nitride semiconductor manufacturing apparatus to which has adhered deposits containing nitride semiconductor, comprising:
 a step for chemically treating the component of the nitride semiconductor manufacturing apparatus with a cleaning gas containing a chlorine-based gas, and   a step for removing the deposits from the component of the nitride semiconductor manufacturing apparatus by spraying with a sublimable solid substance.   
     
     
         2 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 1 , wherein a mixed gas comprised of a mixture of at least one type of chlorine-based gas among chlorine, hydrogen chloride and boron trichloride, and
 at least one type of diluent gas among nitrogen, argon, helium and air, is used for the cleaning gas.   
     
     
         3 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 1 , wherein the treatment temperature of the chemical treatment is within the range of 500° C. to 1000° C. 
     
     
         4 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 3 , wherein a component having low activation energy among the deposit components is removed in the chemical treatment step. 
     
     
         5 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 1 , wherein the sublimable solid substance at least contains carbon dioxide. 
     
     
         6 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 5 , wherein the sublimable solid substance is dry ice. 
     
     
         7 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 1 , wherein a gas flow path component is preferably used as the component of the nitride semiconductor manufacturing apparatus to be cleaned. 
     
     
         8 . A device for cleaning a component of a nitride semiconductor manufacturing apparatus, having:
 a reaction chamber, which in addition to housing a component of a nitride semiconductor manufacturing apparatus to which has adhered deposits containing nitride semiconductor, is introduced with a cleaning gas containing a chlorine-based gas,   a cooling chamber that houses the component of the nitride semiconductor manufacturing apparatus that has been subjected to chemical treatment with the cleaning gas containing a chlorine-based gas, and   a spraying device housed in the cooling chamber that sprays a sublimable solid substance onto the component of the nitride semiconductor manufacturing apparatus.   
     
     
         9 . The device for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 8 , having a heater that heats the inside of the reaction chamber. 
     
     
         10 . The device for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 8 , having an exhaust port that evacuates gas inside the reaction chamber. 
     
     
         11 . The device for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 8 , having a transfer portion arranged in opposition to the reaction chamber and the cooling chamber that transfers the component of the nitride semiconductor manufacturing apparatus from the reaction chamber to the cooling chamber between the reaction chamber and the cooling chamber. 
     
     
         12 . The device for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 8 , wherein the spraying device has a nozzle portion that sprays the sublimable solid substance onto the component of the nitride semiconductor manufacturing apparatus, and a solid substance formation portion that is integrated into a single unit with the nozzle portion, is introduced with a sublimable gas and a carrier gas from separate introduction ports, and forms the sublimable solid substance. 
     
     
         13 . The device for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 8 , wherein the sublimable solid substance is dry ice. 
     
     
         14 . The method for cleaning a component of a nitride semiconductor manufacturing apparatus according to  claim 1 , wherein the step in which the chemical treatment is carried out is a step for removing at least a portion of the deposits by chemically treating a component of a nitride semiconductor manufacturing apparatus to which deposits containing nitrogen semiconductor have adhered with a cleaning gas containing a chlorine-based gas, and
 the step for removing the deposits is a step for removing at least a portion of the remaining deposits from the component of the nitride semiconductor manufacturing apparatus by spraying with a sublimable solid substance.