Methods and Apparatuses for Manufacturing Geometric Multicrystalline Cast Silicon and Geometric Multicrystalline Cast Silicon Bodies for Photovoltaics

Abstract

Methods and apparatuses are provided for casting silicon for photovoltaic cells and other applications. With such methods and apparatuses, a cast body of geometrically ordered multi-crystalline silicon may be formed that is free or substantially free of radially-distributed impurities and defects and having at least two dimensions that are each at least about 10 cm is provided.

1 - 35 . (canceled) 
     
     
         36 . A body of continuous geometrically ordered multi-crystalline silicon having a predetermined arrangement of grain orientations, the body optionally further having at least two dimensions that are each at least about 10 cm and a third dimension at least about 5 cm. 
     
     
         37 . The body according to  claim 36 , wherein the geometrically ordered multi-crystalline silicon includes silicon grains having an average crystal grain cross-section size of about 0.5 cm to about 30 cm. 
     
     
         38 . The body according to  claim 36 , wherein the body is free or substantially free of swirl defects and free or substantially free of oxygen-induced stacking fault defects. 
     
     
         39 . A body of continuous cast geometrically ordered multi-crystalline silicon having a predetermined arrangement of grain orientations, the body optionally having at least two dimensions that are each at least about 10 cm. 
     
     
         40 . The body according to  claim 39 , wherein the geometrically ordered multi-crystalline silicon includes silicon grains having an average crystal grain cross-section size of about 0.5 cm to about 50 cm. 
     
     
         41 . The body according to  claim 39 , wherein the body is free or substantially free of swirl defects and free or substantially free of oxygen-induced stacking fault defects. 
     
     
         42 . A continuous geometrically ordered multi-crystalline silicon wafer having a predetermined arrangement of grain orientations, the wafer further having at least two dimensions that are each at least about 50 mm. 
     
     
         43 . The wafer according to  claim 42 , wherein the wafer includes silicon grains having an average crystal grain cross-section size of about 0.5 cm to about 50 cm. 
     
     
         44 . The wafer according to  claim 39 , wherein the wafer is free or substantially free of swirl defects and free or substantially free of oxygen-induced stacking fault defects. 
     
     
         45 - 48 . (canceled) 
     
     
         49 . A solar cell, comprising: a wafer formed from a body of continuous geometrically ordered multi-crystalline silicon, the body having a predetermined arrangement of grain orientations with a common pole direction being perpendicular to a surface of the body, the body further having at least two dimensions that are each optionally at least about 10 cm and a third dimension at least about 5 cm; a p-n junction in the wafer; an optional anti-reflective coating on a surface of the wafer; optionally at least one layer selected from a back surface field and a passivating layer; and electrically conductive contacts on the wafer. 
     
     
         50 . The solar cell according to  claim 49 , wherein the geometrically ordered multi-crystalline silicon includes silicon grains having an average crystal grain cross-section size of about 0.5 cm to about 30 cm. 
     
     
         51 . The solar cell according to  claim 49 , wherein the body is free or substantially free of swirl defects and free or substantially free of oxygen-induced stacking fault defects. 
     
     
         52 . A solar cell, comprising: a wafer formed from a body of continuous cast geometrically ordered multi-crystalline silicon, the body having a predetermined arrangement of grain orientations with a common pole direction being perpendicular to a surface of the body, the body further having at least two dimensions that are each optionally at least about 10 cm; a p-n junction in the wafer; an optional anti-reflective coating on a surface of the wafer; optionally at least one layer selected from a back surface field and a passivating layer; and electrically conductive contacts on the wafer. 
     
     
         53 . The solar cell according to  claim 52 , wherein the geometrically ordered multi-crystalline silicon includes silicon grains having an average crystal grain cross-section size of about 0.5 cm to about 30 cm. 
     
     
         54 . The solar cell according to  claim 52 , wherein the body is free or substantially free of swirl defects and free or substantially free of oxygen-induced stacking fault defects. 
     
     
         55 - 60 . (canceled)