Semiconductor storage device and method of manufacturing the same

Abstract

According to one embodiment, coupling capacitance in a state in which a first heat radiation member is arranged between parallel flat plates of a first capacitor formed by a surface of a housing opposed to one surface of a printed circuit board and the printed circuit board is smaller than coupling capacitance in a state in which an integrally formed object having a relative dielectric constant of 5.8 is arranged between the first capacitor to cover a first radiating region containing the controller and the first nonvolatile semiconductor memories.

1 . A semiconductor memory device comprising:
 a circuit board including a circuit pattern;   a nonvolatile semiconductor memory; and   a connector that is capable of being coupled with a host apparatus, wherein   the circuit board includes a first surface, a second surface located opposite to the first surface, a first end having the connector, a second end in which a cutout is formed, and a corner intersected with the first end and the second end,   the nonvolatile semiconductor memory is mounted on the first surface,   the semiconductor memory device is configured to be capable of being housed in a housing, the housing including a first side and a second side, the second side being adjacent to the first side, the housing including a coupling portion, the coupling portion being fixed to the host apparatus and located on the second side, the second side facing the second end,   the connector is configured to pass through the first side of the housing, the semiconductor memory device is configured to be capable of being housed in the housing in a position in which a center axis of the first surface along a direction in which the connector connects to the host apparatus is shifted toward the second side with respect to a center axis of the housing along the direction in which the connector connects to the host apparatus, and   the cutout is configured to be capable of holding, inside, a part of the coupling portion.   
     
     
         2 . The semiconductor memory device according to  claim 1 , wherein
 the coupling portion includes a screw and a screw hole through which the screw is inserted, the screw hole being formed through the second side.   
     
     
         3 . The semiconductor memory device according to  claim 2 , wherein
 the screw projects into the housing, wherein   the cutout is configured to avoid interference between the projecting screw and the circuit board.   
     
     
         4 . The semiconductor memory device according to  claim 3 , wherein
 a shape of the connector and a position of the connector with respect to the housing conform to a Serial Advanced Technology Attachment standard.   
     
     
         5 . The semiconductor memory device according to  claim 4 , wherein
 the housing is a 2.5-inch-type housing.   
     
     
         6 . The semiconductor memory device according to  claim 1 , wherein
 a predetermined space is formed between the cutout and the circuit pattern.   
     
     
         7 . The semiconductor memory device according to  claim 1 , wherein
 the circuit board has an eight-layer structure.   
     
     
         8 . The semiconductor memory device according to  claim 1 , wherein
 the circuit board has a substantially rectangular shape in plane view, wherein the first end is an end of longer dimension of the circuit board, wherein the second end is an end of shorter dimension of the circuit board.   
     
     
         9 . The semiconductor memory device according to  claim 1 , wherein
 the nonvolatile semiconductor memory is a NAND flash memory.   
     
     
         10 . A box-type semiconductor memory device comprising:
 a semiconductor memory including:   a circuit board including a circuit pattern;   a nonvolatile semiconductor memory; and   a connector that is capable of being coupled with a host apparatus; and   a housing that houses the semiconductor memory, wherein   the housing includes:   a first side; and   a second side, the second side being adjacent to the first side and on the second side, a coupling portion being fixed to the host apparatus,   the circuit board includes a first surface, a second surface located opposite to the first surface, a first end having the connector, a second end in which a cutout is formed, and a corner intersected with the first end and the second end,   the nonvolatile semiconductor memory is mounted on the first surface,   the connector is configured to pass through the first side of the housing,   the housing is configured to house the semiconductor memory in a position in which a center axis of the first surface along a direction in which the connector connects to the host apparatus is shifted toward the second side with respect to a center axis of the housing along the direction in which the connector connects to the host apparatus, and   the cutout is configured to hold inside, a part of the coupling portion.   
     
     
         11 . The box-type semiconductor memory device according to  claim 10 , wherein
 the coupling portion includes a screw and a screw hole through which the screw is inserted, the screw hole being formed through the second side.   
     
     
         12 . The box-type semiconductor memory device according to  claim 11 , wherein
 the screw projects into the housing, and   the cutout is configured to avoid interference between the projecting screw and the circuit board.   
     
     
         13 . The box-type semiconductor memory device according to  claim 12 , wherein
 a shape of the connector and a position of the connector with respect to the housing conform to a Serial Advanced Technology Attachment standard.   
     
     
         14 . The box-type semiconductor memory device according to  claim 13 , wherein
 the housing is a 2.5-inch-type housing.   
     
     
         15 . The box-type semiconductor memory device according to  claim 10 , wherein
 a predetermined space is formed between the cutout and the circuit pattern.   
     
     
         16 . The box-type semiconductor memory device according to  claim 10 , wherein
 the circuit board has an eight-layer structure.   
     
     
         17 . The box-type semiconductor memory device according to  claim 10 , wherein
 the circuit board has a substantially rectangular shape in plane view, wherein   the first end is an end of longer dimension of the circuit board, wherein   the second end is an end of shorter dimension of the circuit board.   
     
     
         18 . The box-type semiconductor memory device according to  claim 10 , wherein
 the nonvolatile semiconductor memory is a NAND flash memory.   
     
     
         19 . A semiconductor memory device comprising:
 a nonvolatile semiconductor memory; and   a circuit board including a first end having a connector and a second end in which a cutout portion is formed, wherein,   in a state in which the circuit board is mounted in a housing, the cutout portion is configured to be capable of holding, inside, at least a part of a fixing portion, the fixing portion being formed through a side of the housing, the fixing portion being fixed to an external host apparatus.   
     
     
         20 . A memory system comprising:
 a housing in which, through a side, a fixing portion being fixed to an external host apparatus is formed;   a nonvolatile semiconductor memory;   a connector that is capable of being coupled with the external host apparatus; and   a circuit board including a first end having the connector and a second end in which a cutout is formed, the cutout holding, inside, at least a part of the fixing portion.