US2014318624A1PendingUtilityA1
Enhancement of semiconducting photovoltaic absorbers by the addition of alkali salts through solution coating techniques
Assignee: ZETTA RES AND DEV LLC AQT SERIESPriority: Mar 9, 2009Filed: Apr 28, 2014Published: Oct 30, 2014
Est. expiryMar 9, 2029(~2.7 yrs left)· nominal 20-yr term from priority
H10P 14/3436H10P 14/3241H10P 14/2923H10P 14/265H10F 77/1696H10F 77/1694H10F 77/169H10F 77/126H10F 10/167H10F 77/311H01L 31/02167Y02E10/541
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Claims
Abstract
In particular embodiments, a method is described for forming photovoltaic devices that includes providing a substrate suitable for use in a photovoltaic device, depositing a conductive contact layer over the substrate, depositing a salt solution over the surface of the conductive contact layer, the solution comprising a volatile solvent and an alkali metal salt solute, and depositing a semiconducting absorber layer over the solute residue left by the evaporated solvent.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An intermediate structure for use in a photovoltaic cell comprising:
a substrate; a conductive contact layer deposited over the substrate; and an alkali metal salt layer deposited over the conductive contact layer.
2 . The structure of claim 1 , further comprising a semiconducting absorber layer deposited over and immediately adjacent the alkali metal salt layer.
3 . The structure of claim 2 , further comprising a second alkali metal salt layer over and immediately adjacent the absorber layer.
4 . The structure of claim 1 , wherein the alkali metal salt solute is comprised of:
one or more alkali metals including one or more of lithium (Li), sodium (Na), potassium (K), rubidium (Rb), and caesium (Cs); and one or more cations including one or more of fluorine (F), chlorine (Cl), bromine (Br), iodine (I), sulfur (S), selenium (Se), tellurium (Te), and oxygen (O).
5 . The structure of claim 1 , wherein the absorber layer is comprised of one or more layers each comprised of one or more of copper indium gallium diselenide, copper indium gallium selenide sulfide, and copper indium gallium disulfide, copper-indium-disulfide, or copper-indium-diselenide.Cited by (0)
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