Optoelectronic devices with all-inorganic colloidal nanostructured films

Abstract

Optoelectronic devices and methods of producing the same are disclosed. Methods may include forming a film from fused all-inorganic colloidal nanostructures, where the nanostructures may include inorganic nanoparticles and functional inorganic ligands, and the fused nanostructures may form an electrical network that is photoconductive. Other methods may provide an optoelectronic device which may include an integrated circuit or large panel thin-film transistor matrix, an array of conductive regions, and an optically sensitive material over at least a portion of the integrated circuit and in electrical communication with at least one conductive region of the array of conductive regions.

What is claimed is: 
     
         1 . A film comprising a nanostructure comprising an inorganic nanoparticle fused with a functional inorganic ligand. 
     
     
         2 . The film of  claim 1 , wherein the nanostructure is devoid of organic material. 
     
     
         3 . The film of  claim 1 , wherein charge carriers are mobile throughout the film. 
     
     
         4 . The film of  claim 1 , wherein the nanostructure is fused with a second nanostructure. 
     
     
         5 . The film of  claim 4 , wherein charge carriers are mobile between the nanostructure and the fused second nanostructure. 
     
     
         6 . The film of  claim 4 , wherein the fused nanostructures define a conductive electrical network. 
     
     
         7 . The film of  claim 4 , wherein the fused nanostructures include at least one functional inorganic ligand selected from a group consisting of polyatomic anions, transition metals, lanthanides, actinides, chalcogenide molecular compounds, Zintl ions, inorganic complexes, metal-free inorganic ligands, and/or a combination thereof 
     
     
         8 . The film of  claim 4 , wherein fused nanostructures include nanoparticles of different compositions and fused functional inorganic ligands. 
     
     
         9 . The film of  claim 4 , wherein fused nanostructures includes nanoparticles of different sizes and fused functional inorganic ligands. 
     
     
         10 . The film of  claim 4 , wherein the fused nanostructures have a carrier mobility of between about 0.01 and about 80 cm 2 /Vs. 
     
     
         11 . The film of  claim 4 , wherein the fused nanostructures have a substantially linear response to irradiation in at least a portion of the electromagnetic spectrum. 
     
     
         12 . The film of  claim 1 , wherein fused nanostructures have an electrical resistance of at least about 25 k-Ohm/square. 
     
     
         13 . The film of  claim 1 , wherein the film has an optical response to irradiation in at least one of the x-ray, ultraviolet, visible, and/or infrared regions of the electromagnetic spectrum. 
     
     
         14 . The film of  claim 1 , wherein the film is substantially inorganic. 
     
     
         15 . The film of  claim 1 , wherein the inorganic nanoparticles and functional inorganic ligands are colloidal and included in an ink or solution that is deposited and fused, and wherein the film retains the inorganic nanoparticles and functional inorganic ligands. 
     
     
         16 . The film of  claim 1 , wherein the inorganic nanoparticles maintain the same size, shape, and opto-electronic properties of the inorganic nanoparticles that were deposited from the all-inorganic nanostructure ink. 
     
     
         17 . The film of  claim 1 , wherein the inorganic nanoparticles include semiconductor, metal, metal-oxide, oxide and/or magnetic alloy materials and/or a combination thereof. 
     
     
         18 . The film of  claim 1 , wherein the inorganic nanoparticles comprise at least one of PbS, InAs, InP, PbSe, CdS, CdSe, InGaAs, (Cd-Hg)Te, ZnSe(PbS), ZnS(CdSe), ZnSe(CdS), PbO(PbS), and PbSO(PbS). 
     
     
         19 . The film of  claim 1 , wherein the optical response of the film is determined by a size and composition of the inorganic nanoparticles in the film. 
     
     
         20 . The film of  claim 1 , wherein the film is disposed on a substrate. 
     
     
         21 . The film of  claim 20 , wherein the substrate is flexible and formed in a non-planar shape. 
     
     
         22 . The film of  claim 20 , wherein the substrate comprises an integrated circuit and/or a thin-film transistor array, at least some components of which are in electrical communication with the film. 
     
     
         23 . The film of  claim 20 , wherein the substrate comprises at least one of a semiconducting organic molecule, a semiconducting polymer, a nanocrystalline semiconductor, an amorphous semiconductor, or a crystalline semiconductor.