Solid-state imaging device, production method thereof, and electronic device

Abstract

Disclosed is a solid-state imaging device which includes a pixel section, a peripheral circuit section, a first isolation region formed with a STI structure on a semiconductor substrate in the peripheral circuit section, and a second isolation region formed with the STI structure on the semiconductor substrate in the pixel section. The portion of the second isolation region buried into the semiconductor substrate is shallower than the portion buried into the semiconductor substrate of the first isolation region, and the height of the upper face of the second isolation region is equal to that of the first isolation region. A method of producing the solid-state imaging device and an electronic device provided with the solid-state imaging devices are also disclosed.

1 - 10 . (canceled) 
     
     
         11 . A solid-state imaging device, comprising:
 a pixel section configured to have a plurality of pixels, each the plurality of pixels including a photoelectric conversion region and a transistor region;   a first isolation region formed around the photoelectric conversion region; and   a second isolation region formed around the transistor region.   
     
     
         12 . The solid-state imaging device according to  claim 11 , wherein a material of the first isolation region is different from a material of the second isolation region. 
     
     
         13 . The solid-state imaging device according to  claim 11 , wherein the first isolation region is a first conductivity type impurity region. 
     
     
         14 . The solid-state imaging device according to  claim 11 , wherein the second isolation region has a shallow trench isolation structure. 
     
     
         15 . The solid-state imaging device according to  claim 11 , wherein the photoelectric region includes at least one photoelectric conversion element. 
     
     
         16 . The solid-state imaging device according to  claim 15 , wherein the transistor region includes a first transistor which transfers a charge in the photoelectric conversion element to a node. 
     
     
         17 . The solid-state imaging device according to  claim 16 , wherein the node is a floating diffusion. 
     
     
         18 . The solid-state imaging device according to  claim 16 , wherein the transistor region includes a second transistor which resets the node. 
     
     
         19 . The solid-state imaging device according to  claim 16 , wherein the transistor region includes a third transistor which converts the charge to a voltage signal.