Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a semiconductor substrate configured to include a circuit pattern at one surface, an insulation film formed over a back surface of the semiconductor substrate, a through silicon via (TSV) configured to pass through the semiconductor substrate and the insulation film, and an oxide film formed at a sidewall of the TSV and protruded from the back surface of the semiconductor substrate in a manner that the oxide film partially contacts the insulation film.

What is claimed is: 
     
         1 . A semiconductor device comprising:
 a semiconductor substrate including a circuit pattern formed at a front side of the semiconductor substrate;   an insulation film formed over a back side of the semiconductor substrate;   a through silicon via (TSV) passing through the semiconductor substrate and the insulation film; and   an oxide film formed over a sidewall of the TSV and protruding from a back side of the semiconductor substrate to the insulation film so that the oxide film partially contacts the insulation film.   
     
     
         2 . The semiconductor device according to  claim 1 , wherein the oxide film is not exposed to the outside of the insulation film. 
     
     
         3 . The semiconductor device according to  claim 2 , further comprising:
 a metal barrier film formed over the TSV.   
     
     
         4 . The semiconductor device according to  claim 3 , further comprising:
 a prevention film formed over the metal barrier film.   
     
     
         5 . The semiconductor device according to  claim 4 , wherein any of the insulation film and the prevention film includes a nitride film. 
     
     
         6 . The semiconductor device according to  claim 1 , wherein a top surface of the oxide film protrudes from the back surface of the semiconductor substrate by a height of around 1 μm to around 1.5 μm. 
     
     
         7 . A semiconductor device comprising:
 a semiconductor substrate including a circuit pattern formed at a front side of the semiconductor substrate;   a mask film formed over a back side of the semiconductor substrate;   a through silicon via (TSV) passing through the semiconductor substrate and the mask film, protruding from the mask film; and   an oxide film formed over a sidewall of the TSV, protruding from a back side of the semiconductor substrate, and formed not to extend beyond a top surface of the mask film provided over the semiconductor substrate.   
     
     
         8 . The semiconductor device according to  claim 7 , wherein the mask film is formed of a photoresist or carbon material. 
     
     
         9 . The semiconductor device according to  claim 7 , wherein the mask film is formed to have a thickness of around 3 μm to around 3.5 μm. 
     
     
         10 . A method for forming a semiconductor device, the method comprising:
 forming a through silicon via (TSV) passing through a semiconductor substrate that includes a circuit pattern formed at a front side of the semiconductor substrate;   forming an oxide film over a sidewall of the TSV;   etching a portion of a back side of the semiconductor substrate;   etching a portion of the oxide film so that the etched oxide film protrudes from the back surface of the etched semiconductor substrate; and   forming an insulation film over the etched semiconductor substrate and the etched oxide film.   
     
     
         11 . The method according to  claim 10 , wherein forming the oxide film includes:
 forming a vertical hole in the semiconductor substrate; and   forming the oxide film along a surface of the vertical hole,   wherein the TSV is formed by filling the vertical hole in which the oxide film is formed, with a conductive material.   
     
     
         12 . The method according to  claim 11 , further comprising:
 prior to filling the vertical hole with the conductive material,   forming a prevention film along a surface of the oxide film; and   forming a metal barrier film along a surface of the prevention film.   
     
     
         13 . The method according to  claim 10 , wherein etching the portion of the oxide film includes:
 exposing a top portion and an upper sidewall of the oxide film over the TSV by etching the portion of the back side of the semiconductor substrate;   forming a mask film over the etched semiconductor substrate;   etching the top portion and a part of the upper sidewall of the oxide film using the mask film as a mask; and   removing the mask film so that a back surface of the etched semiconductor substrate is exposed and the etched oxide film protrudes from the back surface of the etched semiconductor substrate.   
     
     
         14 . The method according to  claim 13 , wherein forming the mask film includes:
 forming the mask film so that the TSV passes through the mask film and protrudes from a top surface of the mask film.   
     
     
         15 . The method according to  claim 13 , wherein removing the top portion and the upper sidewall of the oxide film includes:
 removing the top portion and the upper sidewall of the oxide film so that the etched oxide film protrudes from the back surface of the etched semiconductor substrate and includes a top surface disposed under a top surface of the mask film.   
     
     
         16 . The method according to  claim 10 , wherein forming the insulation film over the back surface of the etched semiconductor substrate includes:
 depositing an insulation material over the back surface of the etched semiconductor substrate, the etched oxide film, and the TSV; and   planarizing the deposited insulation material until a top surface of the TSV is exposed to form the insulation film.   
     
     
         17 . The method according to  claim 13 , wherein the mask film is formed of a photoresist or carbon material. 
     
     
         18 . The method according to  claim 12 , wherein any of the insulation film and the prevention film includes a nitride film.