Atomic layer deposition reactor for processing a batch of substrates and method thereof

Abstract

The invention relates to a method that includes providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process, and loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing. The invention also relates to a corresponding apparatus.

1 . A method comprising:
 providing a reaction chamber module of an atomic layer deposition reactor for processing a batch of substrates by an atomic layer deposition process; and   loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing.   
     
     
         2 . The method of  claim 1 , comprising:
 pre-processing the batch of substrates in a pre-processing module of the atomic layer deposition reactor;   processing the pre-processed batch of substrates by the atomic layer deposition process in the reaction chamber module of the reactor; and   post-processing the processed batch of substrates in a post-processing module of the reactor, where the pre-processing module, the reaction chamber module, and the post-processing module are located in a row.   
     
     
         3 . The method of  claim 2 , wherein said processing by an atomic layer deposition process comprises depositing material on the batch of substrates by sequential self-saturating surface reactions. 
     
     
         4 . The method of  claim 2 , wherein said pre-processing module is a pre-heating module and said pre-processing comprises pre-heating the batch of substrates. 
     
     
         5 . The method of  claim 2 , wherein said post-processing module is a cooling module and said post-processing comprises cooling the batch of substrates. 
     
     
         6 . The method of  claim 2 , comprising transporting the batch of substrates in one direction through the whole processing line, the processing line comprising the pre-processing, reaction chamber and post-processing modules. 
     
     
         7 . The method of  claim 2 , wherein the pre-processing module is a first load lock, and the method comprises pre-heating the batch of substrates in a raised pressure in the first load lock by means of heat transport. 
     
     
         8 . The method  claim 2 , wherein the post-processing module is a second load lock, and the method comprises cooling the batch of substrates in a raised pressure in the second load lock by means of heat transport. 
     
     
         9 . The method of  claim 1 , comprising dividing the batch of substrates into substrate subsets, and processing each of the subsets simultaneously in the reaction chamber module, each subset having its own gas flow inlet and gas flow outlet. 
     
     
         10 . The method of  claim 1 , comprising depositing aluminum oxide on solar cell structure. 
     
     
         11 . An apparatus comprising:
 a reaction chamber module of an atomic layer deposition reactor configured to process a batch of substrates by an atomic layer deposition process; and   a loading and unloading arrangement allowing loading the batch of substrates before processing into the reaction chamber module via a different route than the batch of substrates is unloaded after processing.   
     
     
         12 . The apparatus of  claim 11 , comprising:
 a pre-processing module of the atomic layer deposition reactor configured to pre-process the batch of substrates;   the reaction chamber module of the reactor configured to process the pre-processed batch of substrates by the atomic layer deposition process; and   a post-processing module of the reactor configured to post-process the processed batch of substrates, where the pre-processing module, the reaction chamber module, and the post-processing module are located in a row.   
     
     
         13 . The apparatus of  claim 12 , wherein said processing by an atomic layer deposition process comprises depositing material on the batch of substrates by sequential self-saturating surface reactions. 
     
     
         14 . The apparatus of  claim 12 , wherein said pre-processing module is a pre-heating module configured to pre-heat the batch of substrates. 
     
     
         15 . The apparatus of  claim 12 , wherein said post-processing module is a cooling module configured to cool the batch of substrates. 
     
     
         16 . The apparatus of  claim 12 , wherein the apparatus is configured for transporting the batch of substrates in one direction through the whole processing line, the processing line comprising the pre-processing, reaction chamber and post-processing modules. 
     
     
         17 . The apparatus of  claim 12 , wherein the pre-processing module is a first load lock configured to pre-heat the batch of substrates in a raised pressure by means of heat transport. 
     
     
         18 . The apparatus of  claim 12 , wherein the post-processing module is a second load lock configured to cool the batch of substrates in a raised pressure by means of heat transport. 
     
     
         19 . The apparatus of  claim 11 , wherein the reaction chamber module comprises partition walls or is configured to receive partition walls dividing the batch of substrates into substrate subsets, each subset having its own gas flow inlet and gas flow outlet.