Sapphire substrate

Abstract

A sapphire substrate includes a generally planar surface having a crystallographic orientation selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientations, and having a nTTV of not greater than about 0.037 μm/cm 2 , wherein nTTV is total thickness variation normalized for surface area of the generally planar surface, the substrate having a diameter not less than about 9.0 cm.

What is claimed is: 
     
         1 . A sapphire material comprising a major surface having a surface area of not less than about 25 cm 2 , and further comprising:
 a normalized bow of the major surface of not greater than 0.100 μm/cm 2 , wherein the normalized bow is a bow measurement of the major surface normalized for the surface area;   a normalized flatness of the major surface of not greater than 0.100 μm/cm 2 , wherein the normalized flatness is a flatness measurement of the major surface normalized for the surface area of the major surface; and   any combination thereof.   
     
     
         2 . The sapphire material of  claim 1 , wherein the sapphire material comprises a thickness not greater than about 1 mm. 
     
     
         3 . The sapphire material of  claim 1 , wherein the surface area is not less than about 30 cm 2 . 
     
     
         4 . The sapphire material of  claim 1 , wherein the surface area is not less than about 40 cm 2 . 
     
     
         5 . The sapphire material of  claim 1 , wherein the major surface comprises a normalized warp of not greater than about 0.190 μm/cm 2 , wherein the normalized warp is a warp measurement of the major surface normalized for the surface area of the major surface. 
     
     
         6 . The sapphire material of  claim 1 , wherein the normalized bow is not greater than 0.100 μm/cm 2  and the normalized flatness is not greater than 0.100 μm/cm 2 . 
     
     
         7 . The sapphire material of  claim 1 , wherein the normalized bow is not greater than 0.080 μm/cm 2  and the normalized flatness is not greater than 0.080 μm/cm 2 . 
     
     
         8 . The sapphire material of  claim 1 , wherein the normalized flatness is not greater than 0.080 μm/cm 2  and the normalized bow is within a range of between about 0.030 μm/cm 2  and about 0.100 μm/cm 2 . 
     
     
         9 . The sapphire material of  claim 1 , wherein the major surface comprises a total thickness variation (TTV) of not greater than about 3 microns. 
     
     
         10 . The sapphire material of  claim 1 , wherein the major surface comprises a normalized warp of at least 0.11 μm/cm 2  and not greater than about 0.190 μm/cm 2 , wherein the normalized warp is a warp measurement of the major surface normalized for the surface area of the major surface, and a normalized total thickness variation (nTTV) of at least 0.015 μm/cm 2  and not greater than about 0.037 μm/cm 2 , wherein the normalized TTV is a TTV measurement of the major surface normalized for the surface area of the major surface 
     
     
         11 . The sapphire material of  claim 1 , wherein the major surface comprises a normalized warp of not greater than about 0.190 μm/cm 2 , and wherein the normalized bow is not greater than 0.100 μm/cm 2  and the normalized flatness is not greater than 0.100 μm/cm 2 . 
     
     
         12 . The sapphire material of  claim 1 , wherein the normalized bow is not greater than 0.070 μm/cm 2  and the normalized flatness is not greater than 0.070 μm/cm 2 . 
     
     
         13 . The sapphire material of  claim 1 , further comprising a ratio of width:thickness not less than 124:1. 
     
     
         14 . The sapphire material of  claim 1 , wherein a crystallographic orientation of the sapphire substrate is selected from the group consisting of a-plane, r-plane, m-plane, and c-plane orientation. 
     
     
         15 . The sapphire material of  claim 1 , wherein the material is part of a display. 
     
     
         16 . The sapphire material of  claim 1 , further comprising one or more transistors coupled thereto. 
     
     
         17 . The sapphire material of  claim 1 , wherein the major surface comprises a surface roughness of not greater than 100.0 Å. 
     
     
         18 . The sapphire material of  claim 1 , wherein the major surface comprises a C-plane orientation having a tilt angle of not greater than about 2.0 degrees. 
     
     
         19 . The sapphire material of  claim 1 , wherein the sapphire material is a substrate having a flat. 
     
     
         20 . The sapphire material of  claim 1 , wherein the sapphire material is formed from EFG.