US2014347145A1PendingUtilityA1
High frequency circuit module
Est. expiryAug 21, 2032(~6 yrs left)· nominal 20-yr term from priority
H05K 1/185H03H 9/0566H03H 2001/0085H05K 1/0243H05K 1/0206H05K 1/0207H03H 1/0007H05K 3/4608H04L 5/14H04B 1/58H05K 1/0237H03H 9/08H04B 1/44H03H 11/344H05K 1/0216H03H 7/463H03H 11/348H10W 90/724H10W 70/63H10W 40/255H10W 40/228H04B 1/38H05K 1/18
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Claims
Abstract
The high frequency circuit module includes an RFIC configured to transmit and receive a high frequency signal, a power amplifier IC configured to amplify a transmission signal outputted from the RFIC, and a duplexers configured to separate the transmission signal outputted from the power amplifier IC and inputted to an antenna and a reception signal from the antenna and inputted to the RFIC from each other, in which at least one of the RFIC and power amplifier IC is embedded in the circuit substrate, and the duplexers are disposed between the RFIC and the power amplifier IC.
Claims
exact text as granted — not AI-modified1 . A high frequency circuit module, comprising:
a circuit substrate having stacked insulating layers and conductive layers; a high frequency IC that is mounted on the circuit substrate and that performs transmission and reception of a high frequency signal; a power amplifier IC that is mounted on the circuit substrate and that amplifies a transmission signal from the high frequency IC; and a duplexer having a transmission filter that performs filtering on an amplified transmission signal outputted from the power amplifier IC to the antenna, and a reception filter that performs filtering on a reception signal inputted from the antenna to the high frequency IC, wherein the transmission filter is disposed closer to the power amplifier IC than the reception filter is.
2 . The high frequency circuit module according to claim 1 , wherein the circuit substrate includes: a core layer that is a conductive layer having a thickness greater than other conductive layers and that functions as a ground; a ground electrode disposed on a bottom surface of the circuit substrate; a first via conductor for heat dissipation that connects a lower surface of the power amplifier IC to the core layer; and a second via conductor for heat dissipation that connects the ground electrode to the core layer.
3 . The high frequency circuit module according to claim 1 , wherein the duplexer is embedded in the circuit substrate.
4 . The high frequency circuit module according to claim 2 , wherein the duplexer is embedded in the circuit substrate.
5 - 6 . (canceled)
7 . The high frequency circuit module according to claim 1 , wherein the duplexer is mounted on the circuit substrate.
8 . The high frequency circuit module according to claim 2 , wherein the duplexer is mounted on the circuit substrate.Join the waitlist — get patent alerts
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