Heterogeneous Integration Process Incorporating Layer Transfer in Epitaxy Level Packaging

Abstract

Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

What is claimed is: 
     
         1 . A method of forming an epitaxial structure comprising:
 mounting a patterned epitaxial structure contained within an assembly substrate to a separate crystalline substrate;   implanting an ion species suitable for exfoliation into said assembly substrate to form an ion implanted exfoliation layer in said assembly substrate;   bonding a handling substrate to said assembly substrate;   separating said handling substrate and ion implanted exfoliation layer from said assembly substrate;   wherein at least a first portion of said assembly substrate with said patterned epitaxial structure remains bonded to said handling substrate.   
     
     
         2 . The method of  claim 1  further including a step: forming said patterned epitaxial structure within said assembly substrate. 
     
     
         3 . The method of  claim 1  wherein a second portion of said assembly substrate remains bonded to said crystalline substrate. 
     
     
         4 . The method of  claim 2  further including a step: performing an additional exfoliation process on said second portion of said assembly substrate and said crystalline substrate to form a second exfoliation layer within said assembly substrate. 
     
     
         5 . The method of  claim 1  wherein a first microsystem comprised of a first material is formed on a first region of said first portion of said assembly substrate, and a separate second microsystem comprised of a second material is formed on a second separate region of said first portion of said assembly substrate. 
     
     
         6 . The method of  claim 5  wherein said first material is silicon based semiconductor, and said second material is one or more compound semiconductors. 
     
     
         7 . The method of  claim 4  wherein additional processing can be done to form devices on said second portion of said assembly substrate. 
     
     
         8 . A method of forming an epitaxial structure comprising:
 implanting an ion species suitable for exfoliation into a crystalline substrate to form an ion implanted region in said crystalline substrate;   mounting an assembly substrate over said ion implanted region;   wherein said assembly substrate includes a number of apertures extending there through forming an assembly pattern;   growing an epitaxial material within said assembly pattern to form an epitaxial pattern;   wherein during growing of said epitaxial material said ion implanted region is converted to an ion induced exfoliation region;   further wherein during said growing step said epitaxial pattern is also separated from said crystalline substrate.   
     
     
         9 . The method of  claim 8  wherein said ion species is selected such that an annealing process to induce exfoliation occurs at approximately a same temperature as said epitaxial growing step. 
     
     
         10 . An epitaxial structure comprising:
 a solid assembly substrate containing a patterned epitaxial structure extending from a top surface to a bottom surface of said assembly substrate;   an ion implanted exfoliated layer contained within a first plane extending laterally through said assembly substrate parallel to at least said top surface or bottom surface;   wherein said solid assembly substrate is adapted to be divided into two separate composite halves along said first plane, such that each of said two separate composite halves contains a separate epitaxial pattern capable of forming electronic and/or other microdevices.   
     
     
         11 . The epitaxial structure of  claim 10  further including a separate crystalline substrate attached to said bottom surface of said assembly substrate. 
     
     
         12 . The epitaxial structure of  claim 10  further including a separate handling substrate bonded to said top surface of said assembly substrate. 
     
     
         13 . An epitaxial structure situated in an assembly substrate comprising:
 a first epitaxial circuit in the assembly substrate comprising first electronic and/or other microdevices made of a first epitaxial material situated in a first surface region of the epitaxial structure;   a second epitaxial circuit in the assembly substrate comprising second electronic devices made of a second epitaxial material situated in a second surface region of the epitaxial structure;   wherein said second epitaxial material is different from said first epitaxial material;   further wherein said first surface region is adjacent to at least portions of said second surface region;   an interconnect structure for coupling said first electronic devices and second electronic devices.   
     
     
         14 . The epitaxial structure of  claim 13  further including an interface layer situated between the first and second epitaxial materials and the assembly substrate. 
     
     
         15 . The epitaxial structure of  claim 13  further including an exfoliation layer situated within the assembly substrate and said first and second epitaxial materials.