Power integrated device having surface corrugations

Abstract

According to a process for manufacturing an integrated power device, projections and depressions are formed in a semiconductor body that extend in a first direction and are arranged alternated in succession in a second direction, transversely to the first direction. Further provided are a first conduction region and a second conduction region. The first conduction region and the second conduction region define a current flow direction parallel to the first direction, along the projections and the depressions. To form the projections and the depressions, portions of the semiconductor body that extend in the first direction and correspond to the depressions, are selectively oxidized.

What is claimed is: 
     
         1 . A power integrated device, comprising:
 a semiconductor body, having projections and depressions, which extend in a first direction and are arranged alternated in succession in a second direction, transverse to the first direction;   a first conduction region and a second conduction region, arranged so as to define a current flow direction between the first conduction region and the second conduction region parallel to the first direction, along the projections and the depressions; wherein ridges of the projections and a bottom of adjacent depressions are connected through walls having a rounded profile.   
     
     
         2 . The device according to  claim 1 , further comprising at least a field insulation structure, arranged transversely to the projections and to the depressions, in the second direction, and a control region, arranged between the first conduction region and the second conduction region and lying in part on the field insulation structure. 
     
     
         3 . The device according to  claim 1 , further comprising a control region between the first conduction region and the second conduction region. 
     
     
         4 . The device according to  claim 3 , further comprising a field insulation structure arranged transversely to the projections and to the depressions and extending in the second direction. 
     
     
         5 . The device according to  claim 4 , wherein the control region lies in part on the field insulation structure. 
     
     
         6 . The device according to  claim 5 , wherein the first conduction region and the second conduction region are arranged at sides of the field insulation structure and extend in the second direction, transversely to the projections and to the depressions. 
     
     
         7 . The device according to  claim 1 , wherein the first conduction region and the second conduction region extend in the second direction, transversely to the projections and to the depressions. 
     
     
         8 . A system comprising a control unit and a power integrated device according to  claim 1  which is coupled to the control unit. 
     
     
         9 . A device, comprising:
 a semiconductor substrate having parallel alternating projections and depressions which are connected by walls having rounded profiles; and   first and second conduction regions formed in the semiconductor substrate and configured to define a current flow direction along the projections and the depressions.   
     
     
         10 . The device as defined in  claim 9 , further comprising a field insulation structure arranged transversely to the projections and the depressions, and a control region arranged between the first conduction region and the second conduction region. 
     
     
         11 . The device according to  claim 10 , wherein the control region lies in part on the field insulation structure. 
     
     
         12 . The device according to  claim 11 , wherein the first conduction region and the second conduction region are arranged at sides of the field insulation structure and extend in a direction transverse to the projections and to the depressions. 
     
     
         13 . The device according to  claim 9 , wherein the first conduction region and the second conduction region extend in a direction transverse to the projections and to the depressions.