US2015014174A1PendingUtilityA1

Perpendicular write head with laminated side shields

Assignee: SEAGATE TECHNOLOGY LLCPriority: Sep 28, 2010Filed: Sep 29, 2014Published: Jan 15, 2015
Est. expirySep 28, 2030(~4.2 yrs left)· nominal 20-yr term from priority
C25D 7/00G11B 5/858C25D 5/02C25D 5/617G11B 5/3116G11B 5/1278C25D 5/12
67
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Claims

Abstract

A perpendicular write head, the write head having an air bearing surface, the write head including a magnetic write pole, wherein at the air bearing surface, the write pole has a trailing side, a leading side that is opposite the trailing side, and first and second sides; side gaps, wherein the side gaps are proximate the write pole along the first and second side edges; and side shields proximate the side gaps, wherein the side shields have gap facing surfaces and include at least one set of alternating layers of magnetic and non-magnetic materials, wherein only one kind of material makes up the gap facing surfaces at the air bearing surfaces.

Claims

exact text as granted — not AI-modified
1 - 20 . (canceled) 
     
     
         21 . A method of forming laminated side shields comprising the steps of:
 forming a conductive seedlayer;   forming a block that encapsulates the conductive seedlayer, the block having vertical side walls and a top;   forming a layer of magnetic material on at least one of the vertical side walls of the block by electroplating; and   forming a layer of non-magnetic material on the layer of magnetic material by electroplating.   
     
     
         22 . The method according to  claim 21 , wherein the conductive seedlayer is formed on or within a substrate. 
     
     
         23 . The method according to  claim 22 , wherein the substrate is configured to allow electrical connection to the conductive seedlayer. 
     
     
         24 . The method according to  claim 23 , wherein the conductive seedlayer is grounded to the substrate. 
     
     
         25 . The method according to  claim 23 , wherein the conductive seedlayer is formed in electrical contact with a conductive non-plating trace. 
     
     
         26 . The method according to  claim 21 , wherein the conductive seedlayer comprises Ru, NiFe, NiP, or combinations thereof. 
     
     
         27 . The method according to  claim 25 , wherein the conductive non-plating trace comprises chromium or tantalum. 
     
     
         28 . The method according to  claim 21 , wherein the block comprises a conductive material. 
     
     
         29 . The method according to  claim 28 , wherein the conductive material comprises NIP, NIFe, Cu, or combinations thereof. 
     
     
         30 . The method according to  claim 21 , wherein the block is formed by depositing photoresist material; etching at least part of the photoresist material to leave an area clear of photoresist material; electroplating the block in the area clear of photoresist material. 
     
     
         31 . The method according to  claim 21 , wherein the block is formed by depositing block material and etching some of the block material away to form the block. 
     
     
         32 . The method according to  claim 21 , wherein the layers of magnetic material and non-magnetic material independently have thicknesses, and each of the thicknesses can be controlled by controlling a time in a plating bath, a plating current of a plating bath, components of the plating baths, or combinations thereof. 
     
     
         33 . The method according to  claim 21  further comprising forming subsequent layers of magnetic and non-magnetic materials by subsequent electroplating steps. 
     
     
         34 . The method according to  claim 21  further comprising patterning the block before plating the layer of mangiest material. 
     
     
         35 . A method of forming laminated side shields comprising the steps of:
 forming a conductive seedlayer within or on a substrate, wherein the substrate is configured to allow electrical connection to the conductive seedlayer;   forming a block that encapsulates the conductive seedlayer, the block having vertical side walls and a top;   forming a layer of magnetic material on at least one of the vertical side walls of the block by electroplating; and   forming a layer of non-magnetic material on the layer of magnetic material by electroplating.   
     
     
         36 . The method according to  claim 35 , wherein the block is formed by depositing photoresist material; etching at least part of the photoresist material to leave an area clear of photoresist material; electroplating the block in the area clear of photoresist material. 
     
     
         37 . The method according to  claim 35 , wherein the block is formed by depositing block material and etching some of the block material away to form the block. 
     
     
         38 . The method according to  claim 35 , wherein the layers of magnetic material and non-magnetic material independently have thicknesses, and each of the thicknesses can be controlled by controlling a time in a plating bath, a plating current of a plating bath, components of the plating baths, or combinations thereof. 
     
     
         39 . The method according to  claim 35  further comprising forming subsequent layers of magnetic and non-magnetic materials by subsequent electroplating steps. 
     
     
         40 . A method of forming laminated side shields comprising the steps of:
 forming a conductive seedlayer within or on a substrate, wherein the substrate is configured to allow electrical connection to the conductive seedlayer;   forming a block that encapsulates the conductive seedlayer, the block having vertical side walls and a top;   delivering a current to the conductive seedlayer;   forming a layer of magnetic material on at least one of the vertical side walls of the block by electroplating; and   forming a layer of non-magnetic material on the layer of magnetic material by electroplating.

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