Self-aligned tunable metamaterials

Abstract

A self-aligned tunable metamaterial is formed as a wire mesh. Self-aligned channel grids are formed in layers in a silicon substrate using deep trench formation and a high-temperature anneal. Vertical wells at the channels may also be etched. This may result in a three-dimensional mesh grid of metal and other material. In another embodiment, metallic beads are deposited at each intersection of the mesh grid, the grid is encased in a rigid medium, and the mesh grid is removed to form an artificial nanocrystal.

What is claimed is: 
     
         1 . A method of manufacturing a metamaterial comprising:
 etching a two-dimensional horizontal grid pattern into a substrate block, the two-dimensional grid pattern and depth of the etch being selected for a desired metamaterial property;   annealing the substrate to form a plurality of channel grids, each channel grid being characterized by the two-dimensional grid pattern and each channel grid being substantially identical to and vertically aligned with each other channel grid;   etching a plurality of vertical wells in the substrate block, each vertical well substantially orthogonally intersecting at least two channel grids; and   depositing a first material in the channel grids to form a multi-layer wire mesh.   
     
     
         2 . The method of  claim 1  further comprising depositing the first material in the vertical wells. 
     
     
         3 . The method of  claim 1  further comprising depositing a second material in the vertical wells. 
     
     
         4 . The method of  claim 1  further comprising removing the substrate block. 
     
     
         5 . The method of  claim 1  wherein depositing the first material comprises depositing a metal on the edges of the channels whereby hollow metallic tubes are formed. 
     
     
         6 . The method of  claim 1  wherein depositing the first material comprises filling the channels with the first material whereby solid wires are formed. 
     
     
         7 . The method of  claim 1  wherein the grid pattern is non-rectilinear. 
     
     
         8 . A wire mesh metamaterial constructed according to the process of  claim 1 . 
     
     
         9 . The method of  claim 1  wherein the operation of depositing a first material in the channel grids precedes the step of etching a plurality of vertical wells and further comprising:
 depositing a second material on a plurality of intersecting lines of the first material exposed by the vertical wells; 
 depositing a third material in the vertical wells; 
 removing the substrate block; 
 encasing the multi-layer wire mesh in a rigid medium; 
 removing the first material; and 
 back-filling voids in the rigid medium left by the removal of the first material. 
 
     
     
         10 . An artificial nanocrystal constructed according to the method of  claim 9 . 
     
     
         11 . The method of  claim 9  wherein depositing the second material comprises electrochemical deposition. 
     
     
         12 . The method of  claim 9  wherein the first material and the third material are the same. 
     
     
         13 . The method of  claim 9  wherein the first material is aluminum and the second material is gold. 
     
     
         14 . The method of  claim 9  wherein etching the vertical wells comprises etching with a fluorechemical process. 
     
     
         15 . An artificial self-aligned nanocrystal comprising a plurality of nanoparticles suspended in a rigid substrate, the nanoparticles arranged to impart to the nanocrystal a characteristic resonant frequency. 
     
     
         16 . The artificial nanocrystal of  claim 15  wherein the nanoparticles are gold beads. 
     
     
         17 . The artificial nanocrystal of  claim 15  wherein the rigid substrate is a polymer. 
     
     
         18 . A method of manufacturing an artificial nanocrystal comprising:
 deeply etching a two-dimensional horizontal grid pattern into a substrate block, the two-dimensional grid pattern and depth of the etch being compatible with an array of beads having a programmed resonant frequency;   annealing the substrate to form a plurality of channel grids, each channel grid being characterized by the two-dimensional grid pattern and each channel grid being substantially identical to and vertically aligned with each other channel grid;   metallizing the channel grids to form a plurality of two-dimensional wire grids, each wire grid having a plurality of intersections;   etching a plurality of vertical wells in the substrate block to expose the intersections, the vertical wells being etched orthogonal to the wire grid and each vertical well being etched at a depth selected to expose at least two intersections;   depositing a conductive metal bead on each exposed intersection;   filling the vertical wells with a rigid structural medium; and   chemically removing the two-dimensional wire grids.   
     
     
         19 . The method of  claim 18  further comprising:
 chemically removing the substrate block to leave a three-dimensional mesh structure; 
 encasing the three-dimensional mesh structure in the rigid structural medium; 
 
     
     
         20 . The method of  claim 18  further comprising filling voids left by removal of the wire grid with a rigid structural medium. 
     
     
         21 . The method of  claim 18  wherein the two-dimensional grid pattern and the depth of the vertical wells are selected to place the metal beads substantially equidistant from each other throughout the artificial nanocrystal. 
     
     
         22 . An artificial nanocrystal manufactured according to the method of  claim 18 . 
     
     
         23 . A method of manufacturing a metamaterial comprising:
 etching a two-dimensional horizontal grid pattern into a substrate block, the two-dimensional grid pattern and depth of the etch being selected for a desired metamaterial property;   annealing the substrate to form a channel grid, the channel grid being characterized by the two-dimensional grid pattern; and   depositing a material in the channel grid to form a single-layer wire mesh.