Piezoelectric film producing process, vibrator element, vibrator, oscillator, electronic device, and moving object

Abstract

A piezoelectric film producing process includes depositing a piezoelectric body in a mixed atmosphere of N 2 gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material.

What is claimed is: 
     
         1 . A piezoelectric film producing process comprising depositing a piezoelectric film in a mixed atmosphere of N 2  gas and Ar gas by using a sputtering method, using an Al—Cu alloy as deposition material. 
     
     
         2 . The process according to  claim 1 , wherein the Cu content in the deposition material Al—Cu alloy ranges from 0.25 mass % to 1.0 mass %. 
     
     
         3 . The process according to  claim 1 , wherein the Cu content in the deposition material Al—Cu alloy ranges from 0.4 mass % to 0.6 mass %. 
     
     
         4 . The process according to  claim 1 , wherein the mixture ratio of the N 2  gas and the Ar gas ranges from N 2  gas 50 volume %:Ar gas 50 volume % to N 2  gas 99 volume %:Ar gas 1 volume %. 
     
     
         5 . A vibrator element comprising a base portion, and a vibrating arm extending from the base portion,
 wherein the vibrating arm includes a piezoelectric film that contains Cu at a crystal grain boundary.   
     
     
         6 . A vibrator comprising:
 the vibrator element of  claim 5 ; and   a package housing the vibrator element.   
     
     
         7 . An oscillator comprising:
 the vibrator element of  claim 5 ; and   an oscillation circuit that oscillates the vibrator element.   
     
     
         8 . An electronic device comprising the vibrator element of  claim 5 . 
     
     
         9 . A moving object comprising the vibrator element of  claim 5 .