US2015051080A1PendingUtilityA1

RF-PROPERTIES-OPTIMIZED COMPOSITIONS OF (RE) Ba2Cu3O7- THIN FILM SUPERCONDUCTORS

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Assignee: SUPERCONDUCTOR TECHPriority: Dec 23, 2004Filed: Apr 17, 2014Published: Feb 19, 2015
Est. expiryDec 23, 2024(expired)· nominal 20-yr term from priority
H01L 39/2458H01L 39/2454H01L 39/2438H01L 39/126H01L 39/2461H01L 39/128Y10S505/779Y10S505/777C04B 35/4508Y10S505/776H01P 1/20381Y10T428/24355H01B 1/08C04B 2235/96H01B 12/00H01P 1/20336C04B 2235/85Y10T428/24942Y10T428/26Y10S505/778Y10S505/78Y10T428/266C04B 2235/3215C04B 2235/3224H01F 6/00H10N 60/203H10N 60/857H10N 60/0604H10N 60/0576H10N 60/00H10N 60/0436H10N 60/0381H10N 60/858H10N 60/0632
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Claims

Abstract

The films of this invention are high temperature superconducting (HTS) thin films specifically optimized for microwave and RF applications. In particular, this invention focuses on compositions with a significant deviation from the 1:2:3 stoichiometry in order to create the films optimized for microwave/RF applications. The RF/microwave HTS applications require the HTS thin films to have superior microwave properties, specifically low surface resistance, R s , and highly linear surface reactance, X s , i.e. high J IMD . As such, the invention is characterized in terms of its physical composition, surface morphology, superconducting properties, and performance characteristics of microwave circuits made from these films.

Claims

exact text as granted — not AI-modified
We claim: 
     
         1 . A superconducting article comprising:
 substrate,   at least one buffer layer supported by the substrate, and   a thin film disposed on the substrate having the nominal composition of RE z Ba y Cu 3 O x      wherein RE is a rare earth, wherein the ratio of y/z is 1.65±10% and x is between 6 and 7 inclusive, and   the article including 45-degree grain boundaries in a concentration of <1%.   
     
     
         2 . The article of  claim 1  wherein the thin film is deposited on the substrate by reactive coevaporation. 
     
     
         3 . The article of  claim 1  wherein the thin film has a superconducting transition temperature >87K. 
     
     
         4 . The article of  claim 1  wherein the substrate is lattice matched to the thin film. 
     
     
         5 . The article of  claim 1  having an RMS surface roughness of less than about 10 nm. 
     
     
         6 . The article of  claim 1  wherein the topmost buffer layer is lattice matched to the thin film. 
     
     
         7 . The article of  claim 6  wherein one of the buffer layers is MgO. 
     
     
         8 . The article of  claim 6  wherein one of the buffer layers is Al 2 O 3 . 
     
     
         9 . The article of  claim 1  wherein the substrate is rigid. 
     
     
         10 . The article of  claim 1  wherein the substrate is a single crystal. 
     
     
         11 . The article of  claim 1  wherein the substrate is selected from the group MgO, Al 2 O 3 , LaAlO 3 , NdGaO 3 , (La 0.18 Sr 0.82 )(Al 0.59 Ta 0.41 )O 3 , and SrTiO 3 . 
     
     
         12 . The article of  claim 1  wherein the substrate has a thermal expansion match to the thin film. 
     
     
         13 . The article of  claim 1  wherein the substrate has a surface area >3 square inches. 
     
     
         14 . The article of  claim 1  containing a-axis-oriented grains in a concentration of <1% relative to c-axis-oriented grains. 
     
     
         15 . A superconducting article comprising:
 a substrate, and   a thin film disposed on the substrate having the nominal composition of RE z Ba y Cu 3 O x      wherein RE is a rare earth, wherein the ratio of y/z is 1.65±10% and x is between 6 and 7 inclusive, and   wherein the thin film deposited by reactive coevaporation.   
     
     
         16 . A superconducting article comprising:
 a rigid substrate, and   a thin film disposed on the substrate having the nominal composition of RE z Ba y Cu 3 O x  wherein RE is a rare earth, wherein the ratio of y/z is 1.65±10% and x is between 6 and 7 inclusive, and   the article including 45-degree grain boundaries in a concentration of <1%.   
     
     
         17 . The article of  claim 17  wherein the thin film is deposited on the substrate by reactive coevaporation. 
     
     
         18 . The article of  claim 17  wherein the thin film has a superconducting transition temperature >87K. 
     
     
         19 . The article of  claim 17  wherein the substrate is lattice matched to the thin film. 
     
     
         20 . The article of  claim 17  wherein the substrate has a thermal expansion match to the thin film.

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