US2015054017A1PendingUtilityA1
Led chip package
Assignee: PROLIGHT OPTO TECHNOLOGY CORPPriority: Aug 20, 2013Filed: Aug 20, 2013Published: Feb 26, 2015
Est. expiryAug 20, 2033(~7.1 yrs left)· nominal 20-yr term from priority
Inventors:Chen-Lun Hsing ChenChien-Cheng KuoJung-Hao HungCheng-Chung LeeDing-Yao LinMeng-Chi LiPing-Chun Tsai
H10W 90/756H10W 72/01515H10W 72/075H10H 20/857H10H 20/856H10H 20/854H10H 20/8506H10H 20/0362H10H 20/034H10H 20/8582H10H 20/8581H10H 20/85H01L 33/62H01L 33/40
39
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Claims
Abstract
An LED chip package having a topographical glass coating on top surface for enhancing heat dissipation is disclosed. A circular wall is optionally built to surround the LED chip for reflecting light beams from the LED chips; the glass coating further extends to cove the inner wall surface of the circular wall. The larger area the glass coating covers, the more heat the package dissipates in a time unit. The LED chip package according to the present invention exhibits higher thermal dissipation and helps to last longer the life of the LED chip package than a traditional one.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An LED chip package, comprising:
an LED chip; has a first top electrode and a second top electrode; a middle copper nugget, carrying the LED chip; a left copper nugget; a right copper nugget; a first metal wire, electrically coupling the first top electrode to the left copper nugget; a second metal wire, electrically coupling the second top electrode to the right copper nugget; and a topographical glass coating, covering the surface of the bonding wires, the top surface of the LED chip, and the exposed top surface of the copper nuggets.
2 . The LED chip package as claimed in claim 1 , further comprising:
a circular wall, surrounding the LED chip and the bonding wires; wherein the topographical glass coating, covering the top surface of an area surrounded by the circular wall.
3 . The LED chip package as claimed in claim 2 , wherein the topographical glass coating, further extending to cover the inner wall surface of the circular wall.
4 . An LED chip package, comprising:
a left copper nugget; a right copper nugget; an LED chip, having a first bottom electrode and a second bottom electrode; straddles over the left copper nugget and the right copper nugget; wherein the first bottom electrode electrically coupled to the left copper nugget, and the second bottom electrode electrically coupled to the right copper nugget, and a topographical glass coating, covering the top surface of the LED chip and the exposed top surface of the copper nuggets.
5 . The LED chip package as claimed in claim 4 , further comprising:
a circular wall, surrounding the LED chip; and the topographical glass coating further extending to cover the inner wall surface of the circular wall.
6 . The LED chip package as claimed in claim 1 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
7 . An LED chip package, comprising:
a ceramic substrate; a left metal pad, configured on a top surface of the ceramic substrate; a right metal pad; configured on a top surface of the ceramic substrate; an LED chip, having a first top electrode and a second top electrode; a first metal wire, electrically coupling the first top electrode to the left copper metal pad 41 ; and a second metal wire, electrically coupling the second top electrode to the right metal pad. a topographical glass coating, covering the top surface of the LED chip, metal pads, and the exposed top surface of the ceramic substrate.
8 . The LED chip package as claimed in claim 7 , further comprising:
a circular wall, surrounding the LED chip and the bonding wires; and the topographical glass coating further extending to cover the inner wall surface of the circular wall.
9 . The LED chip package as claimed in claim 7 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
10 . An LED chip package, comprising:
a ceramic substrate 30 ; a left metal pad, configured on a top surface of the ceramic substrate; a right metal pad; configured on a top surface of the ceramic substrate; an LED chip, straddles over the left metal pad and the right metal pad; a topographical glass coating, covering the top surface of the LED chip, metal pads and the exposed top surface of the ceramic substrate.
11 . The LED chip package as claimed in claim 10 , further comprising:
a circular wall, surrounding the LED chip and the metal pads; and
the topographical glass coating further extending to cover the inner wall surface of the circular wall.
12 . The LED chip package as claimed in claim 10 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
13 . An LED chip package, comprising:
a MCPCB substrate, having a metal core and a dielectric layer configured on a top surface of the metal core; a left metal pad, configured on a top surface of the dielectric layer; a right metal pad; configured on a top surface of the dielectric layer; an LED chip, having a first top electrode and a second top electrode; a first metal wire, electrically coupling the first top electrode to the left metal pad; and a second metal wire, electrically coupling the second top electrode to the right metal pad; and a topographical glass coating, covering the bonding wires, the top surface of the LED chip, and the exposed top surface of the dielectric layer.
14 . The LED chip package as claimed in claim 13 , further comprising:
a circular wall, surrounding the LED chip and the metal pads; and
the topographical glass coating further extending to cover the inner wall surface of the circular wall.
15 . The LED chip package as claimed in claim 13 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
16 . An LED chip package, comprising:
a MCPCB substrate, having a metal core, and a dielectric layer on a top surface of the metal core; a left metal pad, configured on a top surface of the dielectric layer; a right metal pad; configured on a top surface of the dielectric layer; an LED chip, straddles over the left metal pad and the right metal pad; and a topographical glass coating, covering the top surface of the LED chip, metal pads and the exposed top surface of the dielectric layer.
17 . The LED chip package as claimed in claim 16 , further comprising:
a circular wall, surrounding the LED chip and the metal pads; and
the topographical glass coating further extending to cover the inner wall surface of the circular wall.
18 . The LED chip package as claimed in claim 16 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
19 . A wafer with a topographical glass coating on top surface, comprising:
a wafer; and a topographical glass coating, covering the top surface of the wafer.
20 . The wafer as claimed in claim 19 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
21 . A chip with a topographical glass coating on top surface, comprising:
a chip; and a topographical glass coating, covering the top surface of the chip; wherein the topographical glass coating has a vertical edge flushed with a vertical edge of the chip.
22 . The chip with a topographical glass coating on top surface as claimed in claim 21 , wherein the topographical glass coating containing a material selected from the group consisting of silicon oxide, silicon nitride, aluminum oxide, aluminum oxynitride, and silica carbon nitride.
23 . A process for preparing a topographically glass-coated chip, comprising:
preparing a wafer; and performing a topographical glass coating over the wafer.
24 . A process for preparing a topographically glass-coated chip as claimed in claim 23 , further comprising:
dicing the wafer to yield a plurality of chips with a topographical glass coating on top surface.
25 . The topographically glass-coated chip prepared according to claim 24 , wherein
the topographical glass coating, having four vertical sides; and the chip, having four vertical sides; wherein each vertical side of the topographical glass coating is flushed with a corresponding vertical side of the chip.
26 . A process for preparing a topographically glass-coated chip, comprising:
preparing a chip on a dicing tap; and performing a topographical glass coating over the chip.
27 . The topographically glass-coated chip prepared according to claim 26 , wherein the topographical glass coating, covering both the top surface of the chip and the four vertical side.Cited by (0)
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