US2015072521A1PendingUtilityA1
Microstructure manufacturing method
Est. expiryJan 8, 2030(~3.5 yrs left)· nominal 20-yr term from priority
H10P 50/283H10P 14/412G21K 1/06B81C 1/00619G01N 23/20075G01T 1/295H01L 21/31111H01L 21/32051
56
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Claims
Abstract
A microstructure manufacturing method includes forming a first insulating film on an Si substrate, exposing an Si surface by removing a part of the first insulating film, forming a recessed portion by etching the Si substrate from the exposed Si surface, forming a second insulating film on a sidewall and a bottom of the recessed portion, forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion, and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A microstructure manufacturing method comprising:
forming a first insulating film on an Si substrate; exposing an Si surface by removing a part of the first insulating film; forming a recessed portion by etching the Si substrate from the exposed Si surface; forming a second insulating film on a sidewall and a bottom of the recessed portion; forming an Si exposed surface by removing at least a part of the second insulating film formed on the bottom of the recessed portion; and filling the recessed portion with a metal from the Si exposed surface by electrolytic plating.Join the waitlist — get patent alerts
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