Light emitting device and manufacturing method thereof

Abstract

A light emitting device of the invention includes a thin film transistor, an insulating layer covering the thin film transistor, an electrode which is electrically connected to the thin film transistor through a contact hole formed on the insulating layer, and a light emitting element formed by interposing a light emitting layer between a first electrode which is electrically connected to the electrode and a second electrode. The light emitting device further includes a layer formed of a different material from that of the insulating layer only between the electrode and the first electrode over the insulating layer and the insulating layer.

What is claimed is: 
     
         1 . A light emitting device comprising:
 a thin film transistor;   an insulating layer formed over the thin film transistor;   a first electrode formed over the insulating layer and electrically connected to the thin film transistor;   a second electrode electrically connected to the first electrode;   a film selectively formed between the insulating layer and the second electrode; and   a light emitting element formed by interposing a light emitting layer between the second electrode and a third electrode,   wherein the film is formed of a different material from the insulating layer.