Power module

Abstract

A power module is disclosed. The power module includes a first substrate, a first metal layer, at least one conductive structure and at least one power device. The first metal layer is disposed on the first substrate. The first metal layer has a first thickness d1. The first thickness d1 satisfies: 5 μm≦d1≦50 μm. The conductive structure is disposed at a position different to the first metal layer on the first substrate. The conductive structure has a second thickness d2. The second thickness d2 satisfies: d2≧100 μm. The power device is disposed on the first substrate, the first metal layer or the conductive structure. The driving electrode of the power device is electrically connected to the first metal layer. The power electrode of the power device is electrically coupled to the conductive structure.

What is claimed is: 
     
         1 . A power module, comprising:
 a first substrate;   a first metal layer, disposed on the first substrate, the first metal layer having a first thickness d1, wherein the first thickness d1 satisfies: 5 μm≦d1≦50 μm;   at least one conductive structure, disposed at a position different to the first metal layer on the first substrate, the conductive structure having a second thickness d2, wherein the second thickness d2 satisfies: d2≧100 μm; and   at least one power device, disposed on the first substrate, the first metal layer or the conductive structure, wherein a driving electrode of the power device is electrically coupled to the first metal layer, and at least one power electrode of the power device is electrically coupled to the conductive structure.   
     
     
         2 . The power module of  claim 1 , further comprising:
 a plurality of flattening structures, disposed on a surface, which is opposite to the first substrate, of the first metal layer.   
     
     
         3 . The power module of  claim 1 , further comprising:
 a bonding structure, disposed between the power device and the conductive structure.   
     
     
         4 . The power module of  claim 1 , further comprising:
 at least one adhesive structure, disposed between the conductive structure and the first substrate.   
     
     
         5 . The power module of  claim 3 , wherein the bonding structure is a solder, a conductive adhesive, a conductive paste or a sintering paste. 
     
     
         6 . The power module of  claim 1 , further comprising:
 a second metal layer, disposed between the first substrate and the conductive structure, wherein the second metal layer has the same to thickness as the first metal layer.   
     
     
         7 . The power module of  claim 1 , further comprising:
 at least one controlling component or a driving component, disposed on the first metal layer or on the first substrate, wherein an output electrode of the controlling component or the driving component is electrically coupled to the driving electrode of the power device.   
     
     
         8 . The power module of  claim 7 , further comprising:
 a passive component, disposed on the first substrate and/or the first metal layer.   
     
     
         9 . The power module of  claim 8 , wherein the passive component is a capacitor, a resistor, a diode or an inductor. 
     
     
         10 . The power module of  claim 8 , wherein the passive component is formed by printing a paste of the passive component to the first substrate and/or the first metal layer. 
     
     
         11 . The power module of  claim 8 , further comprising:
 at least one circuit board, disposed on the first metal layer, wherein the controlling component, the driving component or the passive component is disposed on the circuit board.   
     
     
         12 . The power module of  claim 1 , further comprising:
 a sealing body, covering at least the first metal layer, a part of the conductive structure and the power device, wherein the conductive structure comprises a locking structure, and the sealing body is fixed by the locking structure.   
     
     
         13 . The power module of  claim 12 , wherein the locking structure is a notch, a protrusion or a cavity. 
     
     
         14 . The power module of  claim 1 , further comprising:
 a third metal layer, wherein the first substrate comprises a top side and a bottom side which are relative to each other, the first metal layer is disposed on the top side of the first substrate and the third metal layer is disposed on the bottom side of the first substrate.   
     
     
         15 . The power module of  claim 14 , further comprising:
 a heat dissipation structure, disposed below the third metal layer.   
     
     
         16 . The power module of  claim 1 , further comprising:
 a heat dissipation structure, disposed below the first substrate.   
     
     
         17 . The power module of  claim 1 , further comprising:
 a sealing body, covering at least the first metal layer, a part of the conductive structure and the power device, wherein the sealed body comprises an upper surface and a bottom surface which are relative to each other.   
     
     
         18 . The power module of  claim 17 , further comprising:
 a second substrate, wherein the first substrate is separated from the second substrate, the first substrate is closer to the bottom surface and the second substrate is closer to the upper surface.   
     
     
         19 . The power module of  claim 18 , further comprising:
 a fourth metal layer, wherein the second substrate comprises a front side and a bottom side which are relative to each other, the front side of the second substrate is closer to the first substrate than the bottom side of the second substrate, and the fourth metal layer is disposed on the front side of the second substrate.   
     
     
         20 . The power module of  claim 19 , further comprising:
 a connector, electrically connected to one of the first metal layer and the conductive structure and the fourth metal layer.   
     
     
         21 . The power module of  claim 18 , further comprising:
 a fifth metal layer, wherein the second substrate comprises a front side and a bottom side which are relative to each other, the front side of the second metal layer is closer to the first substrate than the bottom side of the second substrate, and the fifth metal layer is disposed on the bottom side of the second substrate.   
     
     
         22 . The power module of  claim 17 , further comprising:
 a metal conductive layer, disposed on a surface of the sealing body.   
     
     
         23 . The power module of  claim 1 , wherein the first substrate comprises a plurality of sub-substrates, and the plurality of sub-substrates are separated from each other. 
     
     
         24 . The power module of  claim 1 , further comprising:
 a case, comprising an accommodating space; and   a sealing paste, disposed within the accommodating space, wherein the sealing paste covers at least the first metal layer, a part of the conductive structure, and the power device.   
     
     
         25 . The power module of  claim 24 , further comprising:
 a heat dissipation structure, disposed below the first substrate and the first substrate is disposed within the accommodating space.   
     
     
         26 . The power module of  claim 25 , further comprising:
 a third metal layer, disposed between the first substrate and the heat dissipation structure, wherein the third metal layer is disposed within the accommodating space.   
     
     
         27 . The power module of  claim 1 , further comprising:
 a plurality of metal layout layers and a plurality of insulating layers, printed on the first substrate in an interlaced manner, wherein the plurality of metal layout layers are electrically connected to each other.   
     
     
         28 . A power module, comprising:
 a first substrate;   a first metal layer, disposed on the first substrate, the first metal layer having a first thickness d1, wherein the first thickness d1 satisfies: 5 μm≦d1≦50 μm;   at least one conductive structure, disposed at a position different to the first metal layer on the first substrate, the conductive structure having a second thickness d2, wherein the second thickness d2 satisfies: d2≧100 μm;   a driving component, disposed on the first substrate or the first metal layer; and   at least one power device, disposed on the first substrate, the first metal layer or the conductive structure, wherein a driving electrode of the power device is electrically coupled to the driving component, and at least one power electrode of the power device is electrically coupled to the conductive structure.   
     
     
         29 . The power module of  claim 28 , further comprising:
 a circuit board, disposed on the first metal layer, and the driving component is disposed on the circuit board.   
     
     
         30 . The power module of  claim 29 , further comprising:
 at least one passive component, disposed on the first substrate, the first metal layer or the circuit board, wherein the passive component is electrically connected to the driving component.