US2015114566A1PendingUtilityA1
Large area deposition in high vacuum with high thickness uniformity
Est. expiryMay 3, 2022(expired)· nominal 20-yr term from priority
C23F 4/02C23C 14/243C30B 23/066C23C 14/24
56
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Claims
Abstract
The invention relates to an effusing source for film deposition made of a reservoir comprising one hole characterized by the fact that the hole diameter is less than one order of magnitude than the mean free path of the molecules determined by the pressure and its thickness is at least one order of magnitude smaller than the diameter. Preferably the source has several holes.
Claims
exact text as granted — not AI-modified1 - 14 . (canceled)
15 . A point-like gas source for a vacuum deposition/etching system, wherein the point-like gas source has a smaller dimension than a distance to a deposition/etching area, and wherein the gas source is composed of a distribution of smaller effusing holes.
16 . A point-like gas source as defined in claim 15 , having a sub-cosine distribution on a given surface where deposition/etching is achieved and a cosine or over-cosine distribution outside said given surface.
17 . A pre-chamber for a vacuum deposition/etching apparatus in a molecular regime, wherein said pre-chamber comprises several point-like gas sources as defined in claim 15 , which are distributed on annular geometry.
18 . A compact reactor for deposition/etching, wherein said compact reactor comprises a cryo-panel and a pre-chamber with a geometric distribution of point-like gas sources as defined in claim 15 , having a geometry to optimize a molecular impinging rate uniformity according to formula:
I
(
ϑ
)
=
I
0
cos
n
(
ϑ
)
⇒
I
tot
=
I
0
∑
i
=
1
p
[
h
h
2
+
R
2
+
r
2
-
2
Rr
cos
(
β
-
i
2
π
p
)
]
n
.
19 . A point-like gas source for a vacuum deposition/etching system, wherein the point-like gas source has a smaller dimension in comparison to a distance to a deposition/etching area, and where an angular distribution is modified by a structure below or inside a hole.
20 . A point-like gas source as defined in claim 19 , with an interposing volume and a trapping surface consisting of a small aperture with a pumping device modifying the angular distribution as a function of pressure.
21 . A pre-chamber for a vacuum deposition/etching apparatus in a molecular regime, wherein said pre-chamber comprises several point-like gas sources as defined in claim 20 distributed on an annular geometry.
22 . A compact reactor for deposition/etching, comprising a cryo-panel and a pre-chamber with a geometric distribution of sources as defined in 19 with a geometry to optimize a molecular impinging rate uniformity according to formula:
I
(
ϑ
)
=
I
0
cos
n
(
ϑ
)
⇒
I
tot
=
I
0
∑
i
=
1
p
[
h
h
2
+
R
2
+
r
2
-
2
Rr
cos
(
β
-
i
2
π
p
)
]
n
.
23 . A pre-chamber for a vacuum deposition/etching apparatus in a molecular regime, wherein said pre-chamber comprises several point-like sources, having smaller 1 dimensions than the distance to the deposition/etching area, with a cos n distribution on a flat substrate, wherein n=4 corresponding to a Knudsen source, n<4 corresponding to a under-cosine source, and n>4 corresponding to an over-cosine source, and wherein said sources are distributed on an annular geometry.
24 . A compact reactor for deposition/etching, comprising a cryo-panel and a pre-chamber as defined in claim 23 with a geometry to optimize a molecular impinging rate uniformity according to formula:
I
(
ϑ
)
=
I
0
cos
n
(
ϑ
)
⇒
I
tot
=
I
0
∑
i
=
1
p
[
h
h
2
+
R
2
+
r
2
-
2
Rr
cos
(
β
-
i
2
π
p
)
]
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