US2015123151A1PendingUtilityA1

Light emitting device

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Assignee: EPISTAR CORPPriority: Jun 27, 2001Filed: Jan 12, 2015Published: May 7, 2015
Est. expiryJun 27, 2021(expired)· nominal 20-yr term from priority
Inventors:Min-Hsun HsiehKuen-Ru ChuangShu-Wen SungChia-Cheng LiuChao-Nien HuangShane-Shyan WeyChih-Chiang LuMing-Jiunn Jou
H10P 90/1914H10H 20/825H10H 20/824H10H 20/833H10H 20/81H10H 20/018H10H 20/817H01L 33/42H01L 33/16
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Claims

Abstract

A light-emitting structure includes a transparent substrate; a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface; a first light-emitting stack formed on the first top surface; and a first electrode directly formed on the second top surface.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A light-emitting structure, comprising:
 a transparent substrate:   a first transparent conductive layer formed on the transparent substrate and having a first top surface and a second top surface substantially coplanar with the first top surface;   a first light-emitting stack formed on the first top surface; and   a first electrode directly formed on the second top surface.   
     
     
         2 . The light-emitting structure of  claim 1 , further comprising a second transparent conductive layer electrically connected to the light-emitting stack. 
     
     
         3 . The light-emitting structure of  claim 2 , wherein the first transparent conductive layer and the second transparent conductive layer comprises a same material. 
     
     
         4 . The light-emitting structure of  claim 2 , further comprising a second electrode formed on the second transparent conductive layer. 
     
     
         5 . The light-emitting structure of  claim 2 , wherein the first light-emitting stack comprises a semiconductor layer with a width equal to that of the second transparent conductive layer. 
     
     
         6 . The light-emitting structure of  claim 2 , wherein the first transparent conductive layer, the second transparent conductive layer or both comprise ITO. 
     
     
         7 . The light-emitting structure of  claim 1 , further comprising a second light-emitting stack formed on the first transparent conductive layer. 
     
     
         8 . The light-emitting structure of  claim 1 , wherein the first transparent conductive layer is a non-semiconductor layer. 
     
     
         9 . The light-emitting structure of  claim 1 , wherein the transparent substrate comprises sapphire, GaP or glass. 
     
     
         10 . The light-emitting structure of  claim 1 , wherein the first light-emitting stack comprises a semiconductor layer with a width less than that of the first transparent conductive layer. 
     
     
         11 . The light-emitting structure of  claim 1 , wherein the first transparent conductive layer is an amorphous layer. 
     
     
         12 . The light-emitting structure of  claim 1 , wherein the first top surface and the second top surface are flat. 
     
     
         13 . The light-emitting structure of  claim 1 , wherein the first transparent conductive layer is a non-epitaxial layer.

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