Method for manufacturing a multiple-axis thermal convection-type accelerometer

Abstract

A thermal convection-type accelerometer includes a first insulating substrate, a circuit formed on the first insulating substrate, a first acceleration-sensing device coupled with the circuit, and a first supporting layer attached on the insulating substrate. The first acceleration-sensing device includes two temperature-sensing components and a heater disposed between the temperature-sensing components. The temperature-sensing components and the heater are directly formed on the first supporting layer.

What is claimed is: 
     
         1 . A method for manufacturing a multiple-axis thermal convection-type accelerometer, comprising the steps of:
 forming a supporting layer on an insulating substrate;   forming two temperature-sensing components directly on the supporting layer; and   forming a heater directly on the supporting layer and between the two temperature-sensing components.   
     
     
         2 . The method of  claim 1 , further comprising the steps of:
 applying an adhesive around the temperature-sensing components and the heater, wherein each temperature-sensing component comprises a plurality of thermocouples connected in series, and a half of each thermocouple is outside the adhesive; and   placing a cover on the adhesive.   
     
     
         3 . The method of  claim 2 , further comprising the steps of:
 removing air inside the cover; and   filling argon, krypton, or xenon into the cover.   
     
     
         4 . The method of  claim 2 , further comprising a step of attaching a socket connector comprising a plurality of terminals onto the insulating substrate. 
     
     
         5 . The method of  claim 1 , wherein the step of forming two temperature-sensing components directly on the supporting layer comprises the steps of:
 depositing mixed powders of a p-type impurity and silicon by using an e-gun evaporation process to form a p-type amorphous silicon layer;   patterning the p-type amorphous silicon layer to obtain the two temperature-sensing components; and   annealing the p-type amorphous silicon layer to form a p-type doped poly-silicon layer.   
     
     
         6 . The method of  claim 1 , wherein the step of forming a supporting layer on an insulating substrate comprises the steps of:
 forming a silicon dioxide layer on the insulating substrate; and   forming a silicon nitride on the silicon dioxide layer.   
     
     
         7 . The method of  claim 1 , wherein the step of forming two temperature-sensing components comprises the steps of:
 preparing a metal target formed with a mixture of chromium and nickel powders;   vapor-depositing the metal target to form an alloy layer of Chromel by e-gun;   patterning the alloy layer of Chromel;   preparing another metal target formed with a mixture of nickel, aluminum, magnesium and silicon powders;   vapor-depositing the another metal target to form an alloy layer of Alumel by e-gun, and   patterning the alloy layer of Alumel.   
     
     
         8 . The method of  claim 1 , further comprising a step of forming two ambient temperature compensators, wherein the two ambient temperature compensators and the two first temperature-sensing components are alternatively connected in series. 
     
     
         9 . The method of  claim 1 , wherein the step of forming two temperature-sensing components comprises the steps of:
 preparing a metal target formed with a mixture of chromium and nickel powders;   vapor-depositing the metal target to form an alloy layer of Chromel by e-gun;   patterning the alloy layer of Chromel;   preparing another metal target formed with a mixture of nickel and copper powders;   vapor-depositing the another metal target to form an alloy layer of Constantan by e-gun, and   patterning the alloy layer of Constantan.   
     
     
         10 . The method of  claim 1 , wherein the step of forming two temperature-sensing components comprises the steps of:
 preparing a metal target formed with copper powder;   vapor-depositing the metal target to form a layer of copper by e-gun, and   patterning the layer of copper;   preparing another metal target formed with a mixture of nickel and copper powders;   vapor-depositing the another metal target to form an alloy layer of Constantan by e-gun, and   patterning the alloy layer of Constantan.   
     
     
         11 . The method of  claim 1 , wherein the step of forming two temperature-sensing components comprises the steps of:
 preparing a metal target formed with iron powder;   vapor-depositing the metal target to form a layer of iron by e-gun, and   patterning the iron layer;   preparing another metal target formed with a mixture of nickel and copper powders;   vapor-depositing the another metal target to form an alloy layer of Constantan by e-gun, and   patterning the alloy layer of Constantan.